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The Density of States at GaAs/Native Oxide Interfaces
R. K. Ahrenkiel
, D. J. Dunlavy
Materials Science
National Renewable Energy Laboratory
Research output
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Contribution to journal
›
Article
›
peer-review
10
Scopus Citations
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Engineering
Gallium Arsenide
100%
Dielectrics
100%
Anodization
100%
Valence Band
100%
Interface State
100%
Band Edge
50%
Fermi Level
50%
Material Science
Density
100%
Oxide Interface
100%
Gallium Arsenide
100%
Oxide Compound
50%
Capacitance
33%
Anodizing
33%
Dielectric Material
33%