Density of States Measurements in a p-i-n Solar Cell

doi:10.1109/PVSC.1996.564327

Density of States Measurements in a p-i-n Solar Cell

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Abstract

We describe results of density of states (DOS) profiling in p-i-n solar-cell devices using drive-level capacitance (DLC) techniques. Near the p-i interface the defect density is high, decreasing rapidly into the interior, reaching low values in the central region of the cell, and rising rapidly again at the n-i interface. We show that the states in the central region are neutral dangling-bonddefects, whereas those near the interfaces with the doped layers are charged dangling bonds.

Original language	American English
Pages	1117-1120
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1996.564327
State	Published - 1996
Event	Twenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C. Duration: 13 May 1996 → 17 May 1996

Conference

Conference	Twenty Fifth IEEE Photovoltaic Specialists Conference
City	Washington, D.C.
Period	13/05/96 → 17/05/96

NREL Publication Number

NREL/CP-22510

Access to Document

10.1109/PVSC.1996.564327

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title = "Density of States Measurements in a p-i-n Solar Cell",

abstract = "We describe results of density of states (DOS) profiling in p-i-n solar-cell devices using drive-level capacitance (DLC) techniques. Near the p-i interface the defect density is high, decreasing rapidly into the interior, reaching low values in the central region of the cell, and rising rapidly again at the n-i interface. We show that the states in the central region are neutral dangling-bonddefects, whereas those near the interfaces with the doped layers are charged dangling bonds.",

author = "NREL",

year = "1996",

doi = "10.1109/PVSC.1996.564327",

language = "American English",

pages = "1117--1120",

note = "Twenty Fifth IEEE Photovoltaic Specialists Conference ; Conference date: 13-05-1996 Through 17-05-1996",

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AU - NREL, null

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N2 - We describe results of density of states (DOS) profiling in p-i-n solar-cell devices using drive-level capacitance (DLC) techniques. Near the p-i interface the defect density is high, decreasing rapidly into the interior, reaching low values in the central region of the cell, and rising rapidly again at the n-i interface. We show that the states in the central region are neutral dangling-bonddefects, whereas those near the interfaces with the doped layers are charged dangling bonds.

AB - We describe results of density of states (DOS) profiling in p-i-n solar-cell devices using drive-level capacitance (DLC) techniques. Near the p-i interface the defect density is high, decreasing rapidly into the interior, reaching low values in the central region of the cell, and rising rapidly again at the n-i interface. We show that the states in the central region are neutral dangling-bonddefects, whereas those near the interfaces with the doped layers are charged dangling bonds.

U2 - 10.1109/PVSC.1996.564327

DO - 10.1109/PVSC.1996.564327

M3 - Paper

SP - 1117

EP - 1120

T2 - Twenty Fifth IEEE Photovoltaic Specialists Conference

Y2 - 13 May 1996 through 17 May 1996

ER -

Density of States Measurements in a p-i-n Solar Cell

Abstract

Conference

NREL Publication Number

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Cite this