Dependence of Carrier Lifetime on Cu-Contacting Temperature and ZnTe:CU Thickness in CdS/CdTe Thin Film Solar Cells

T. A. Gessert, W. K. Metzger, P. Dippo, S. E. Asher, R. G. Dhere, M. R. Young

Research output: Contribution to journalArticlepeer-review

98 Scopus Citations

Abstract

Cu diffusion from a ZnTe:Cu contact interface can increase the net acceptor concentration in the CdTe layer of a CdS/CdTe photovoltaic solar cell. This reduces the space-charge width (Wd) of the junction and enhances current collection and open-circuit voltage. Here we study the effect of Cu concentration in the CdTe layer on carrier lifetime (τ) using time-resolved photoluminescence measurements of ZnTe:Cu/Ti-contacted CdTe devices. Measurements show that if the ZnTe:Cu layer thickness remains constant and contact temperature is varied, τ increases significantly above its as-deposited value when the contacting temperature is in a range that has been shown to yield high-performance devices (~ 280° to ~ 320 °C). However, when the contacting temperature is maintained near an optimum value and the ZnTe:Cu thickness is varied, τ decreases with ZnTe:Cu thickness.

Original languageAmerican English
Pages (from-to)2370-2373
Number of pages4
JournalThin Solid Films
Volume517
Issue number7
DOIs
StatePublished - 2009

NREL Publication Number

  • NREL/JA-520-42718

Keywords

  • Cadmium telluride
  • Copper
  • Solar cells

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