Dependence of Carrier Lifetime on Cu-Contacting Temperature and ZnTe:CU Thickness in CdS/CdTe Thin Film Solar Cells

T. A. Gessert; W. K. Metzger; P. Dippo; S. E. Asher; R. G. Dhere; M. R. Young

doi:10.1016/j.tsf.2008.11.008

Dependence of Carrier Lifetime on Cu-Contacting Temperature and ZnTe:CU Thickness in CdS/CdTe Thin Film Solar Cells

T. A. Gessert, W. K. Metzger, P. Dippo, S. E. Asher, R. G. Dhere, M. R. Young

Center for Energy Conversion and Storage Systems

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

99 Scopus Citations

Abstract

Cu diffusion from a ZnTe:Cu contact interface can increase the net acceptor concentration in the CdTe layer of a CdS/CdTe photovoltaic solar cell. This reduces the space-charge width (W_d) of the junction and enhances current collection and open-circuit voltage. Here we study the effect of Cu concentration in the CdTe layer on carrier lifetime (τ) using time-resolved photoluminescence measurements of ZnTe:Cu/Ti-contacted CdTe devices. Measurements show that if the ZnTe:Cu layer thickness remains constant and contact temperature is varied, τ increases significantly above its as-deposited value when the contacting temperature is in a range that has been shown to yield high-performance devices (~ 280° to ~ 320 °C). However, when the contacting temperature is maintained near an optimum value and the ZnTe:Cu thickness is varied, τ decreases with ZnTe:Cu thickness.

Original language	American English
Pages (from-to)	2370-2373
Number of pages	4
Journal	Thin Solid Films
Volume	517
Issue number	7
DOIs	https://doi.org/10.1016/j.tsf.2008.11.008 https://doi.org/10.1016/j.tsf.2008.11.008
State	Published - 2009

NREL Publication Number

NREL/JA-520-42718

Keywords

Cadmium telluride
Copper
Solar cells

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title = "Dependence of Carrier Lifetime on Cu-Contacting Temperature and ZnTe:CU Thickness in CdS/CdTe Thin Film Solar Cells",

abstract = "Cu diffusion from a ZnTe:Cu contact interface can increase the net acceptor concentration in the CdTe layer of a CdS/CdTe photovoltaic solar cell. This reduces the space-charge width (Wd) of the junction and enhances current collection and open-circuit voltage. Here we study the effect of Cu concentration in the CdTe layer on carrier lifetime (τ) using time-resolved photoluminescence measurements of ZnTe:Cu/Ti-contacted CdTe devices. Measurements show that if the ZnTe:Cu layer thickness remains constant and contact temperature is varied, τ increases significantly above its as-deposited value when the contacting temperature is in a range that has been shown to yield high-performance devices (~ 280° to ~ 320 °C). However, when the contacting temperature is maintained near an optimum value and the ZnTe:Cu thickness is varied, τ decreases with ZnTe:Cu thickness.",

keywords = "Cadmium telluride, Copper, Solar cells",

author = "Gessert, {T. A.} and Metzger, {W. K.} and P. Dippo and Asher, {S. E.} and Dhere, {R. G.} and Young, {M. R.}",

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doi = "10.1016/j.tsf.2008.11.008",

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T1 - Dependence of Carrier Lifetime on Cu-Contacting Temperature and ZnTe:CU Thickness in CdS/CdTe Thin Film Solar Cells

AU - Gessert, T. A.

AU - Metzger, W. K.

AU - Dippo, P.

AU - Asher, S. E.

AU - Dhere, R. G.

AU - Young, M. R.

PY - 2009

Y1 - 2009

N2 - Cu diffusion from a ZnTe:Cu contact interface can increase the net acceptor concentration in the CdTe layer of a CdS/CdTe photovoltaic solar cell. This reduces the space-charge width (Wd) of the junction and enhances current collection and open-circuit voltage. Here we study the effect of Cu concentration in the CdTe layer on carrier lifetime (τ) using time-resolved photoluminescence measurements of ZnTe:Cu/Ti-contacted CdTe devices. Measurements show that if the ZnTe:Cu layer thickness remains constant and contact temperature is varied, τ increases significantly above its as-deposited value when the contacting temperature is in a range that has been shown to yield high-performance devices (~ 280° to ~ 320 °C). However, when the contacting temperature is maintained near an optimum value and the ZnTe:Cu thickness is varied, τ decreases with ZnTe:Cu thickness.

AB - Cu diffusion from a ZnTe:Cu contact interface can increase the net acceptor concentration in the CdTe layer of a CdS/CdTe photovoltaic solar cell. This reduces the space-charge width (Wd) of the junction and enhances current collection and open-circuit voltage. Here we study the effect of Cu concentration in the CdTe layer on carrier lifetime (τ) using time-resolved photoluminescence measurements of ZnTe:Cu/Ti-contacted CdTe devices. Measurements show that if the ZnTe:Cu layer thickness remains constant and contact temperature is varied, τ increases significantly above its as-deposited value when the contacting temperature is in a range that has been shown to yield high-performance devices (~ 280° to ~ 320 °C). However, when the contacting temperature is maintained near an optimum value and the ZnTe:Cu thickness is varied, τ decreases with ZnTe:Cu thickness.

KW - Cadmium telluride

KW - Copper

KW - Solar cells

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ER -

Dependence of Carrier Lifetime on Cu-Contacting Temperature and ZnTe:CU Thickness in CdS/CdTe Thin Film Solar Cells

Abstract

NREL Publication Number

Keywords

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