Dependence of Hot Carrier Luminescence on Barrier Thickness in GaAs/AlGaAs Superlattices and Multiple Quantum Wells

A. J. Nozik; C. A. Parsons; D. J. Dunlavy; B. M. Keyes; R. K. Ahrenkiel

doi:10.1016/0038-1098(90)90900-V

Dependence of Hot Carrier Luminescence on Barrier Thickness in GaAs/AlGaAs Superlattices and Multiple Quantum Wells

A. J. Nozik, C. A. Parsons, D. J. Dunlavy, B. M. Keyes, R. K. Ahrenkiel

National Renewable Energy Laboratory

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Abstract

Time-integrated hot luminescence spectra have been obtained for 20-period GaAs/Al_xGa_1-xAs superlattices and multiple quantum wells with constant well widths and varying barrier thicknesses. Time-averaged hot electron temperatures were determined by fitting the tails of the emission spectra to a Boltzmann distribution. With strong miniband formation in superlattices hot electron cooling rates were found to be faster than in MQWs and to vary markedly between miniband samples. These results are believed to be related to the delocalization of carriers in the miniband regime, with concomitant increases in the probability for non-radiative quenching of hot electron emission at surfaces and interfaces. Bulk GaAs was found to have a much faster hot electron cooling rate compared to any of the quantized GaAs structures.

Original language	American English
Pages (from-to)	297-301
Number of pages	5
Journal	Solid State Communications
Volume	75
Issue number	4
DOIs	https://doi.org/10.1016/0038-1098(90)90900-V https://doi.org/10.1016/0038-1098(90)90900-V
State	Published - 1990

NREL Publication Number

ACNR/JA-236-11859

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title = "Dependence of Hot Carrier Luminescence on Barrier Thickness in GaAs/AlGaAs Superlattices and Multiple Quantum Wells",

abstract = "Time-integrated hot luminescence spectra have been obtained for 20-period GaAs/AlxGa1-xAs superlattices and multiple quantum wells with constant well widths and varying barrier thicknesses. Time-averaged hot electron temperatures were determined by fitting the tails of the emission spectra to a Boltzmann distribution. With strong miniband formation in superlattices hot electron cooling rates were found to be faster than in MQWs and to vary markedly between miniband samples. These results are believed to be related to the delocalization of carriers in the miniband regime, with concomitant increases in the probability for non-radiative quenching of hot electron emission at surfaces and interfaces. Bulk GaAs was found to have a much faster hot electron cooling rate compared to any of the quantized GaAs structures.",

author = "Nozik, {A. J.} and Parsons, {C. A.} and Dunlavy, {D. J.} and Keyes, {B. M.} and Ahrenkiel, {R. K.}",

year = "1990",

doi = "10.1016/0038-1098(90)90900-V",

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T1 - Dependence of Hot Carrier Luminescence on Barrier Thickness in GaAs/AlGaAs Superlattices and Multiple Quantum Wells

AU - Nozik, A. J.

AU - Parsons, C. A.

AU - Dunlavy, D. J.

AU - Keyes, B. M.

AU - Ahrenkiel, R. K.

PY - 1990

Y1 - 1990

N2 - Time-integrated hot luminescence spectra have been obtained for 20-period GaAs/AlxGa1-xAs superlattices and multiple quantum wells with constant well widths and varying barrier thicknesses. Time-averaged hot electron temperatures were determined by fitting the tails of the emission spectra to a Boltzmann distribution. With strong miniband formation in superlattices hot electron cooling rates were found to be faster than in MQWs and to vary markedly between miniband samples. These results are believed to be related to the delocalization of carriers in the miniband regime, with concomitant increases in the probability for non-radiative quenching of hot electron emission at surfaces and interfaces. Bulk GaAs was found to have a much faster hot electron cooling rate compared to any of the quantized GaAs structures.

AB - Time-integrated hot luminescence spectra have been obtained for 20-period GaAs/AlxGa1-xAs superlattices and multiple quantum wells with constant well widths and varying barrier thicknesses. Time-averaged hot electron temperatures were determined by fitting the tails of the emission spectra to a Boltzmann distribution. With strong miniband formation in superlattices hot electron cooling rates were found to be faster than in MQWs and to vary markedly between miniband samples. These results are believed to be related to the delocalization of carriers in the miniband regime, with concomitant increases in the probability for non-radiative quenching of hot electron emission at surfaces and interfaces. Bulk GaAs was found to have a much faster hot electron cooling rate compared to any of the quantized GaAs structures.

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DO - 10.1016/0038-1098(90)90900-V

M3 - Article

AN - SCOPUS:0025457864

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JO - Solid State Communications

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ER -

Dependence of Hot Carrier Luminescence on Barrier Thickness in GaAs/AlGaAs Superlattices and Multiple Quantum Wells

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