Dependence of Hydrogen Diffusion on Growth Conditions in Hydrogenated Amorphous Silicon

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	663-669
Number of pages	7
Journal	Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Volume	57
Issue number	5
DOIs	https://doi.org/10.1080/13642818808211236
State	Published - 1988

Work performed by Xerox Palo Alto Research Center, Palo Alto, California

NREL Publication Number

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title = "Dependence of Hydrogen Diffusion on Growth Conditions in Hydrogenated Amorphous Silicon",

author = "NREL",

note = "Work performed by Xerox Palo Alto Research Center, Palo Alto, California",

year = "1988",

doi = "10.1080/13642818808211236",

language = "American English",

volume = "57",

pages = "663--669",

journal = "Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties",

issn = "1364-2812",

publisher = "Taylor and Francis Ltd.",

number = "5",

}

TY - JOUR

T1 - Dependence of Hydrogen Diffusion on Growth Conditions in Hydrogenated Amorphous Silicon

AU - NREL, null

N1 - Work performed by Xerox Palo Alto Research Center, Palo Alto, California

PY - 1988

Y1 - 1988

U2 - 10.1080/13642818808211236

DO - 10.1080/13642818808211236

M3 - Article

SN - 1364-2812

VL - 57

SP - 663

EP - 669

JO - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

JF - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

IS - 5

ER -