Abstract
Many III-V semiconductor alloys exhibit spontaneous (111) alternate monolayer ordering when grown from the vapor phase. We have studied theoretically the ordering induced changes in the optical properties of the semiconductor alloys. We descirbe (i) the change of the band gap .delta.Eg and the valence band splitting .delta.E12 as functions of the long range order parameter .eta., (ii) theconsequence of coexistence of (001) epitaxial strain and (111) chemical ordering on the optical properties, (iii) optical anisotropy and spin polarization effects in the ordered alloy, (iv) theory of reflectance-difference spectroscopy in ordered alloy, and (v) the ordering-induced changes on high energy E1 and E2 transitions. Specific experimentally testable predictions are listed in thesummary section.
Original language | American English |
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Pages | 3-17 |
Number of pages | 15 |
State | Published - 1996 |
Event | Materials Research Society Symposium - Boston, Massachusetts Duration: 28 Nov 1995 → 30 Nov 1995 |
Conference
Conference | Materials Research Society Symposium |
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City | Boston, Massachusetts |
Period | 28/11/95 → 30/11/95 |
NREL Publication Number
- NREL/CP-21703