Abstract
The objective of this study was to investigate the size, chemical state, and spatial distribu-tion of metal clusters formed in substantially different cooling conditions of the samples. All samples were scratched on the back with Fe, Cu, and Ni wires and annealed at 1200?C for 2.5 hours in forming gas (N2+5% H2 ambient).
Original language | American English |
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Number of pages | 8 |
State | Published - 2004 |
Event | 14th Workshop on Crystalline Silicon Solar Cells and Modules - Winter Park, Colorado Duration: 8 Aug 2004 → 11 Aug 2004 |
Conference
Conference | 14th Workshop on Crystalline Silicon Solar Cells and Modules |
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City | Winter Park, Colorado |
Period | 8/08/04 → 11/08/04 |
NREL Publication Number
- NREL/CP-520-36749
Keywords
- crystal growth
- crystalline silicon (x-Si) (c-Si)
- defects
- device process
- impurities
- materials and processes
- microelectronics
- module
- passivation
- photovoltaics (PV)
- PV
- solar cells