Dependence of Precipitation Behavior of Cu and Ni in CZ Multicrystalline Silicon on Cooling Conditions: Preprint

Research output: Contribution to conferencePaper

Abstract

The objective of this study was to investigate the size, chemical state, and spatial distribu-tion of metal clusters formed in substantially different cooling conditions of the samples. All samples were scratched on the back with Fe, Cu, and Ni wires and annealed at 1200?C for 2.5 hours in forming gas (N2+5% H2 ambient).
Original languageAmerican English
Number of pages8
StatePublished - 2004
Event14th Workshop on Crystalline Silicon Solar Cells and Modules - Winter Park, Colorado
Duration: 8 Aug 200411 Aug 2004

Conference

Conference14th Workshop on Crystalline Silicon Solar Cells and Modules
CityWinter Park, Colorado
Period8/08/0411/08/04

NREL Publication Number

  • NREL/CP-520-36749

Keywords

  • crystal growth
  • crystalline silicon (x-Si) (c-Si)
  • defects
  • device process
  • impurities
  • materials and processes
  • microelectronics
  • module
  • passivation
  • photovoltaics (PV)
  • PV
  • solar cells

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