Dependence of Precipitation Behavior of Cu and Ni in CZ Multicrystalline Silicon on Cooling Conditions: Preprint

    Research output: Contribution to conferencePaper

    Abstract

    The objective of this study was to investigate the size, chemical state, and spatial distribu-tion of metal clusters formed in substantially different cooling conditions of the samples. All samples were scratched on the back with Fe, Cu, and Ni wires and annealed at 1200?C for 2.5 hours in forming gas (N2+5% H2 ambient).
    Original languageAmerican English
    Number of pages8
    StatePublished - 2004
    Event14th Workshop on Crystalline Silicon Solar Cells and Modules - Winter Park, Colorado
    Duration: 8 Aug 200411 Aug 2004

    Conference

    Conference14th Workshop on Crystalline Silicon Solar Cells and Modules
    CityWinter Park, Colorado
    Period8/08/0411/08/04

    NREL Publication Number

    • NREL/CP-520-36749

    Keywords

    • crystal growth
    • crystalline silicon (x-Si) (c-Si)
    • defects
    • device process
    • impurities
    • materials and processes
    • microelectronics
    • module
    • passivation
    • photovoltaics (PV)
    • PV
    • solar cells

    Fingerprint

    Dive into the research topics of 'Dependence of Precipitation Behavior of Cu and Ni in CZ Multicrystalline Silicon on Cooling Conditions: Preprint'. Together they form a unique fingerprint.

    Cite this