Deposition and Characterization of Nanostructured Cu2O Thin-Film for Potential Photovoltaic Applications

Nishant Gupta; Rajendra Singh; Fan Wu; Jagdish Narayan; Colin McMillen; Githin F. Alapatt; Kelvin F. Poole; Shiou Jyh Hwu; Dino Sulejmanovic; Matthew Young; Glenn Teeter; Harin S. Ullal

doi:10.1557/jmr.2013.150

Deposition and Characterization of Nanostructured Cu2O Thin-Film for Potential Photovoltaic Applications

Nishant Gupta, Rajendra Singh, Fan Wu, Jagdish Narayan, Colin McMillen, Githin F. Alapatt, Kelvin F. Poole, Shiou Jyh Hwu, Dino Sulejmanovic, Matthew Young, Glenn Teeter, Harin S. Ullal

Research output: Contribution to journal › Article › peer-review

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Abstract

Copper (I) oxide (Cu₂O) is a direct band gap semiconductor with p-type conductivity and is a potential candidate for multi-junction solar cells. In this work, incoherent light source based photo-assisted metal-organic chemical vapor deposition (MOCVD) was used to deposit high quality Cu ₂O thin films on n-type <100> silicon and quartz substrates. X-ray diffraction studies reveal that crystalline Cu₂O is deposited. UV-Vis-NIR spectroscopy results indicated a band gap of 2.44 eV for Cu ₂O thin films. Transmission electron spectroscopy results show tha. The Cu₂O film grows i. The form of three-dimensional islands composed of smaller nanocrystalline grains i. The range of 10-20 nm. I-V measurements indicate tha. The Cu₂O/n-Si device fabricated usin. The MOCVD process has a lower dark current density than other devices reported i. The literature.

Original language	American English
Pages (from-to)	1740-1746
Number of pages	7
Journal	Journal of Materials Research
Volume	28
Issue number	13
DOIs	https://doi.org/10.1557/jmr.2013.150 https://doi.org/10.1557/jmr.2013.150
State	Published - 14 Jul 2013

NREL Publication Number

NREL/JA-5200-60327

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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Gupta, N., Singh, R., Wu, F., Narayan, J., McMillen, C., Alapatt, G. F., Poole, K. F., Hwu, S. J., Sulejmanovic, D., Young, M., Teeter, G., & Ullal, H. S. (2013). Deposition and Characterization of Nanostructured Cu2O Thin-Film for Potential Photovoltaic Applications. Journal of Materials Research, 28(13), 1740-1746. https://doi.org/10.1557/jmr.2013.150, https://doi.org/10.1557/jmr.2013.150

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title = "Deposition and Characterization of Nanostructured Cu2O Thin-Film for Potential Photovoltaic Applications",

abstract = "Copper (I) oxide (Cu2O) is a direct band gap semiconductor with p-type conductivity and is a potential candidate for multi-junction solar cells. In this work, incoherent light source based photo-assisted metal-organic chemical vapor deposition (MOCVD) was used to deposit high quality Cu 2O thin films on n-type <100> silicon and quartz substrates. X-ray diffraction studies reveal that crystalline Cu2O is deposited. UV-Vis-NIR spectroscopy results indicated a band gap of 2.44 eV for Cu 2O thin films. Transmission electron spectroscopy results show tha. The Cu2O film grows i. The form of three-dimensional islands composed of smaller nanocrystalline grains i. The range of 10-20 nm. I-V measurements indicate tha. The Cu2O/n-Si device fabricated usin. The MOCVD process has a lower dark current density than other devices reported i. The literature.",

author = "Nishant Gupta and Rajendra Singh and Fan Wu and Jagdish Narayan and Colin McMillen and Alapatt, {Githin F.} and Poole, {Kelvin F.} and Hwu, {Shiou Jyh} and Dino Sulejmanovic and Matthew Young and Glenn Teeter and Ullal, {Harin S.}",

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doi = "10.1557/jmr.2013.150",

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Gupta, N, Singh, R, Wu, F, Narayan, J, McMillen, C, Alapatt, GF, Poole, KF, Hwu, SJ, Sulejmanovic, D, Young, M , Teeter, G & Ullal, HS 2013, 'Deposition and Characterization of Nanostructured Cu2O Thin-Film for Potential Photovoltaic Applications', Journal of Materials Research, vol. 28, no. 13, pp. 1740-1746. https://doi.org/10.1557/jmr.2013.150, https://doi.org/10.1557/jmr.2013.150

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T1 - Deposition and Characterization of Nanostructured Cu2O Thin-Film for Potential Photovoltaic Applications

AU - Gupta, Nishant

AU - Singh, Rajendra

AU - Wu, Fan

AU - Narayan, Jagdish

AU - McMillen, Colin

AU - Alapatt, Githin F.

AU - Poole, Kelvin F.

AU - Hwu, Shiou Jyh

AU - Sulejmanovic, Dino

AU - Young, Matthew

AU - Teeter, Glenn

AU - Ullal, Harin S.

PY - 2013/7/14

Y1 - 2013/7/14

N2 - Copper (I) oxide (Cu2O) is a direct band gap semiconductor with p-type conductivity and is a potential candidate for multi-junction solar cells. In this work, incoherent light source based photo-assisted metal-organic chemical vapor deposition (MOCVD) was used to deposit high quality Cu 2O thin films on n-type <100> silicon and quartz substrates. X-ray diffraction studies reveal that crystalline Cu2O is deposited. UV-Vis-NIR spectroscopy results indicated a band gap of 2.44 eV for Cu 2O thin films. Transmission electron spectroscopy results show tha. The Cu2O film grows i. The form of three-dimensional islands composed of smaller nanocrystalline grains i. The range of 10-20 nm. I-V measurements indicate tha. The Cu2O/n-Si device fabricated usin. The MOCVD process has a lower dark current density than other devices reported i. The literature.

AB - Copper (I) oxide (Cu2O) is a direct band gap semiconductor with p-type conductivity and is a potential candidate for multi-junction solar cells. In this work, incoherent light source based photo-assisted metal-organic chemical vapor deposition (MOCVD) was used to deposit high quality Cu 2O thin films on n-type <100> silicon and quartz substrates. X-ray diffraction studies reveal that crystalline Cu2O is deposited. UV-Vis-NIR spectroscopy results indicated a band gap of 2.44 eV for Cu 2O thin films. Transmission electron spectroscopy results show tha. The Cu2O film grows i. The form of three-dimensional islands composed of smaller nanocrystalline grains i. The range of 10-20 nm. I-V measurements indicate tha. The Cu2O/n-Si device fabricated usin. The MOCVD process has a lower dark current density than other devices reported i. The literature.

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Deposition and Characterization of Nanostructured Cu2O Thin-Film for Potential Photovoltaic Applications

Abstract

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