Deposition and Characterization of Nanostructured Cu2O Thin-Film for Potential Photovoltaic Applications

Nishant Gupta, Rajendra Singh, Fan Wu, Jagdish Narayan, Colin McMillen, Githin F. Alapatt, Kelvin F. Poole, Shiou Jyh Hwu, Dino Sulejmanovic, Matthew Young, Glenn Teeter, Harin S. Ullal

Research output: Contribution to journalArticlepeer-review

31 Scopus Citations

Abstract

Copper (I) oxide (Cu2O) is a direct band gap semiconductor with p-type conductivity and is a potential candidate for multi-junction solar cells. In this work, incoherent light source based photo-assisted metal-organic chemical vapor deposition (MOCVD) was used to deposit high quality Cu 2O thin films on n-type <100> silicon and quartz substrates. X-ray diffraction studies reveal that crystalline Cu2O is deposited. UV-Vis-NIR spectroscopy results indicated a band gap of 2.44 eV for Cu 2O thin films. Transmission electron spectroscopy results show tha. The Cu2O film grows i. The form of three-dimensional islands composed of smaller nanocrystalline grains i. The range of 10-20 nm. I-V measurements indicate tha. The Cu2O/n-Si device fabricated usin. The MOCVD process has a lower dark current density than other devices reported i. The literature.

Original languageAmerican English
Pages (from-to)1740-1746
Number of pages7
JournalJournal of Materials Research
Volume28
Issue number13
DOIs
StatePublished - 14 Jul 2013

NREL Publication Number

  • NREL/JA-5200-60327

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