Deposition and Characterization of Nanostructured Cu2O Thin-Film for Potential Photovoltaic Applications

Nishant Gupta; Rajendra Singh; Fan Wu; Jagdish Narayan; Colin McMillen; Githin F. Alapatt; Kelvin F. Poole; Shiou Jyh Hwu; Dino Sulejmanovic; Matthew Young; Glenn Teeter; Harin S. Ullal

doi:10.1557/jmr.2013.150

Deposition and Characterization of Nanostructured Cu2O Thin-Film for Potential Photovoltaic Applications

Nishant Gupta
, Rajendra Singh
, Fan Wu
, Jagdish Narayan
, Colin McMillen
, Githin F. Alapatt
, Kelvin F. Poole
, Shiou Jyh Hwu
, Dino Sulejmanovic
, Matthew Young
, Glenn Teeter
, Harin S. Ullal

Research output: Contribution to journal › Article › peer-review

35 Scopus Citations

Abstract

Copper (I) oxide (Cu₂O) is a direct band gap semiconductor with p-type conductivity and is a potential candidate for multi-junction solar cells. In this work, incoherent light source based photo-assisted metal-organic chemical vapor deposition (MOCVD) was used to deposit high quality Cu ₂O thin films on n-type <100> silicon and quartz substrates. X-ray diffraction studies reveal that crystalline Cu₂O is deposited. UV-Vis-NIR spectroscopy results indicated a band gap of 2.44 eV for Cu ₂O thin films. Transmission electron spectroscopy results show tha. The Cu₂O film grows i. The form of three-dimensional islands composed of smaller nanocrystalline grains i. The range of 10-20 nm. I-V measurements indicate tha. The Cu₂O/n-Si device fabricated usin. The MOCVD process has a lower dark current density than other devices reported i. The literature.

Original language	American English
Pages (from-to)	1740-1746
Number of pages	7
Journal	Journal of Materials Research
Volume	28
Issue number	13
DOIs	https://doi.org/10.1557/jmr.2013.150 https://doi.org/10.1557/jmr.2013.150
State	Published - 14 Jul 2013

NLR Publication Number

NREL/JA-5200-60327

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Gupta, N., Singh, R., Wu, F., Narayan, J., McMillen, C., Alapatt, G. F., Poole, K. F., Hwu, S. J., Sulejmanovic, D., Young, M., Teeter, G., & Ullal, H. S. (2013). Deposition and Characterization of Nanostructured Cu2O Thin-Film for Potential Photovoltaic Applications. Journal of Materials Research, 28(13), 1740-1746. https://doi.org/10.1557/jmr.2013.150, https://doi.org/10.1557/jmr.2013.150

@article{ac49f848d16d4fea8fedac12c89ca9da,

title = "Deposition and Characterization of Nanostructured Cu2O Thin-Film for Potential Photovoltaic Applications",

abstract = "Copper (I) oxide (Cu2O) is a direct band gap semiconductor with p-type conductivity and is a potential candidate for multi-junction solar cells. In this work, incoherent light source based photo-assisted metal-organic chemical vapor deposition (MOCVD) was used to deposit high quality Cu 2O thin films on n-type <100> silicon and quartz substrates. X-ray diffraction studies reveal that crystalline Cu2O is deposited. UV-Vis-NIR spectroscopy results indicated a band gap of 2.44 eV for Cu 2O thin films. Transmission electron spectroscopy results show tha. The Cu2O film grows i. The form of three-dimensional islands composed of smaller nanocrystalline grains i. The range of 10-20 nm. I-V measurements indicate tha. The Cu2O/n-Si device fabricated usin. The MOCVD process has a lower dark current density than other devices reported i. The literature.",

author = "Nishant Gupta and Rajendra Singh and Fan Wu and Jagdish Narayan and Colin McMillen and Alapatt, \{Githin F.\} and Poole, \{Kelvin F.\} and Hwu, \{Shiou Jyh\} and Dino Sulejmanovic and Matthew Young and Glenn Teeter and Ullal, \{Harin S.\}",

year = "2013",

month = jul,

day = "14",

doi = "10.1557/jmr.2013.150",

language = "American English",

volume = "28",

pages = "1740--1746",

journal = "Journal of Materials Research",

issn = "0884-2914",

publisher = "Springer International Publishing AG",

number = "13",

}

Gupta, N, Singh, R, Wu, F, Narayan, J, McMillen, C, Alapatt, GF, Poole, KF, Hwu, SJ, Sulejmanovic, D, Young, M , Teeter, G & Ullal, HS 2013, 'Deposition and Characterization of Nanostructured Cu2O Thin-Film for Potential Photovoltaic Applications', Journal of Materials Research, vol. 28, no. 13, pp. 1740-1746. https://doi.org/10.1557/jmr.2013.150, https://doi.org/10.1557/jmr.2013.150

TY - JOUR

T1 - Deposition and Characterization of Nanostructured Cu2O Thin-Film for Potential Photovoltaic Applications

AU - Gupta, Nishant

AU - Singh, Rajendra

AU - Wu, Fan

AU - Narayan, Jagdish

AU - McMillen, Colin

AU - Alapatt, Githin F.

AU - Poole, Kelvin F.

AU - Hwu, Shiou Jyh

AU - Sulejmanovic, Dino

AU - Young, Matthew

AU - Teeter, Glenn

AU - Ullal, Harin S.

PY - 2013/7/14

Y1 - 2013/7/14

N2 - Copper (I) oxide (Cu2O) is a direct band gap semiconductor with p-type conductivity and is a potential candidate for multi-junction solar cells. In this work, incoherent light source based photo-assisted metal-organic chemical vapor deposition (MOCVD) was used to deposit high quality Cu 2O thin films on n-type <100> silicon and quartz substrates. X-ray diffraction studies reveal that crystalline Cu2O is deposited. UV-Vis-NIR spectroscopy results indicated a band gap of 2.44 eV for Cu 2O thin films. Transmission electron spectroscopy results show tha. The Cu2O film grows i. The form of three-dimensional islands composed of smaller nanocrystalline grains i. The range of 10-20 nm. I-V measurements indicate tha. The Cu2O/n-Si device fabricated usin. The MOCVD process has a lower dark current density than other devices reported i. The literature.

AB - Copper (I) oxide (Cu2O) is a direct band gap semiconductor with p-type conductivity and is a potential candidate for multi-junction solar cells. In this work, incoherent light source based photo-assisted metal-organic chemical vapor deposition (MOCVD) was used to deposit high quality Cu 2O thin films on n-type <100> silicon and quartz substrates. X-ray diffraction studies reveal that crystalline Cu2O is deposited. UV-Vis-NIR spectroscopy results indicated a band gap of 2.44 eV for Cu 2O thin films. Transmission electron spectroscopy results show tha. The Cu2O film grows i. The form of three-dimensional islands composed of smaller nanocrystalline grains i. The range of 10-20 nm. I-V measurements indicate tha. The Cu2O/n-Si device fabricated usin. The MOCVD process has a lower dark current density than other devices reported i. The literature.

UR - https://www.scopus.com/pages/publications/84880241214

U2 - 10.1557/jmr.2013.150

DO - 10.1557/jmr.2013.150

M3 - Article

AN - SCOPUS:84880241214

SN - 0884-2914

VL - 28

SP - 1740

EP - 1746

JO - Journal of Materials Research

JF - Journal of Materials Research

IS - 13

ER -

Deposition and Characterization of Nanostructured Cu2O Thin-Film for Potential Photovoltaic Applications

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