Deposition and Etching of a-Si:H:F Using Silane and Xenon Difluoride: (Abstract No. AG6)

Research output: Contribution to journal › Article

Original language	American English
Number of pages	399
Journal	Bulletin of the American Physical Society
Volume	32
Issue number	3
State	Published - 1987

NREL Publication Number

@article{ded4ff500fbd412aa7595a173b3face3,

title = "Deposition and Etching of a-Si:H:F Using Silane and Xenon Difluoride: (Abstract No. AG6)",

author = "NREL",

year = "1987",

language = "American English",

volume = "32",

journal = "Bulletin of the American Physical Society",

issn = "0003-0503",

publisher = "American Physical Society",

number = "3",

}