Deposition of Device Quality, Low H Content, a-Si:H by the Hot Wire Technique

A. H. Mahan, B. P. Nelson, S. Salamon, R. S. Crandall

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We report measurements of the Urbach edge and density of gap states on a series of hydrogenated amorphous silicon (a-Si:H) films deposited by hot-wire-assisted chemical vapor deposition (HW). We compare the properties of these films to those of a series of a-Si:H films deposited by the traditional radio frequency (rf) glow discharge (GD) technique, where we varied the substrate temperature to change the bonded H content (CH). We show for the first time that, as CH is decreased below the value traditionally associated with device quality GD a-Si:H (∼10 at.%), the electronic properties of the GD films deteriorate in the traditional manner while those for the HW samples remain device quality. Properties of these low CH HW samples will be presented and compared to those of GD films containing comparable CH. Because several indications exist that the structure of the HW films is different than that of the GD films, Raman and Small Angle X-Ray Scattering (SAXS) measurements are presented to illustrate structural differences.

Original languageAmerican English
Pages (from-to)657-660
Number of pages4
JournalJournal of Non-Crystalline Solids
Issue numberPART 2
StatePublished - 1991

Bibliographical note


NREL Publication Number

  • ACNR/JA-214-12493


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