Deposition of Device Quality, Low H Content Amorphous Silicon

A. H. Mahan, J. Carapella, B. P. Nelson, R. S. Crandall, I. Balberg

Research output: Contribution to journalArticlepeer-review

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Abstract

Device-quality hydrogenated amorphous silicon containing as little as 1/10 the bonded H observed in device-quality glow discharge films have been deposited by thermal decomposition of silane on a heated filament. These low H content films show an Urbach edge width of 50 mV and a spin density of ∼1/100 as large as that of glow discharge films containing comparable amounts of H. High substrate temperatures, deposition in a high flux of atomic H, and lack of energetic particle bombardment are suggested as reasons for this behavior.

Original languageAmerican English
Pages (from-to)6728-6730
Number of pages3
JournalJournal of Applied Physics
Volume69
Issue number9
DOIs
StatePublished - 1991

NREL Publication Number

  • SERI/JA-212-3903

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