Deposition of Device Quality, Low Hydrogen Content, Hydrogenated Amorphous Silicon at High Deposition Rates with Increased Stability Using the Hot Wire Filament Technique

NREL (Inventor)

Research output: Patent

Original languageAmerican English
Patent number6,124,186
StatePublished - 2000

NREL Publication Number

  • NREL/PT-520-29290

Cite this