Deposition of Device Quality, Low Hydrogen Content, Hydrogenated Amorphous Silicon at High Deposition Rates with Increased Stability Using the Hot Wire Filament Technique

NREL (Inventor)

    Research output: Patent

    Original languageAmerican English
    Patent number6,124,186
    StatePublished - 2000

    NREL Publication Number

    • NREL/PT-520-29290

    Access to Document

    Cite this