Deposition of Optimal a-Si:H and a-SiGe:H by HWCVD Using the Same Filament Temperature and Substrate Temperature

Deposition of Optimal a-Si:H and a-SiGe:H by HWCVD Using the Same Filament Temperature and Substrate Temperature

Research output: Contribution to conference › Paper

Original language	American English
Pages	407-412
Number of pages	6
State	Published - 2004
Event	Amorphous and Nanocrystalline Silicon Science and Technology: Materials Research Society Symposium - San Francisco, California Duration: 13 Apr 2004 → 16 Apr 2004

Conference

Conference	Amorphous and Nanocrystalline Silicon Science and Technology: Materials Research Society Symposium
City	San Francisco, California
Period	13/04/04 → 16/04/04

NREL Publication Number

NREL/CP-520-37514

Cite this

@conference{1dc7bb1889a74059a59defc94673f3d6,

title = "Deposition of Optimal a-Si:H and a-SiGe:H by HWCVD Using the Same Filament Temperature and Substrate Temperature",

author = "NREL",

year = "2004",

language = "American English",

pages = "407--412",

note = "Amorphous and Nanocrystalline Silicon Science and Technology: Materials Research Society Symposium ; Conference date: 13-04-2004 Through 16-04-2004",

}