Deposition of Photosensitive Hydrogenated Amorphous Silicon-Germanium Films with a Tantalum Hot Wire

doi:10.1016/j.tsf.2005.07.171

Deposition of Photosensitive Hydrogenated Amorphous Silicon-Germanium Films with a Tantalum Hot Wire

Research output: Contribution to journal › Article › peer-review

Original language	American English
Pages (from-to)	198-201
Number of pages	4
Journal	Thin Solid Films
Volume	501
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.07.171
State	Published - 2006

NREL Publication Number

NREL/JA-520-38568

Keywords

amorphous silicon-germanium films
hot-wire chemical vapor deposition (HWCVD)
optical bandgap
photo-to-dark conductivity ratio
photon absorption coefficient
photosensitivity
Tauc band gap

Access to Document

10.1016/j.tsf.2005.07.171

Cite this

@article{9f3cc5e6e6344f5f892910c9f7304262,

title = "Deposition of Photosensitive Hydrogenated Amorphous Silicon-Germanium Films with a Tantalum Hot Wire",

keywords = "amorphous silicon-germanium films, hot-wire chemical vapor deposition (HWCVD), optical bandgap, photo-to-dark conductivity ratio, photon absorption coefficient, photosensitivity, Tauc band gap",

author = "NREL",

year = "2006",

doi = "10.1016/j.tsf.2005.07.171",

language = "American English",

volume = "501",

pages = "198--201",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Deposition of Photosensitive Hydrogenated Amorphous Silicon-Germanium Films with a Tantalum Hot Wire

AU - NREL, null

PY - 2006

Y1 - 2006

KW - amorphous silicon-germanium films

KW - hot-wire chemical vapor deposition (HWCVD)

KW - optical bandgap

KW - photo-to-dark conductivity ratio

KW - photon absorption coefficient

KW - photosensitivity

KW - Tauc band gap

U2 - 10.1016/j.tsf.2005.07.171

DO - 10.1016/j.tsf.2005.07.171

M3 - Article

SN - 0040-6090

VL - 501

SP - 198

EP - 201

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -