Design and Characterization of GaN/InGaN Solar Cells

Omkar Jani, Ian Ferguson, Christiana Honsberg, Sarah Kurtz

Research output: Contribution to journalArticlepeer-review

552 Scopus Citations


We experimentally demonstrate the III-V nitrides as a high-performance photovoltaic material with open-circuit voltages up to 2.4 V and internal quantum efficiencies as high as 60%. GaN and high-band gap InGaN solar cells are designed by modifying PC1D software, grown by standard commercial metal-organic chemical vapor deposition, fabricated into devices of variable sizes and contact configurations, and characterized for material quality and performance. The material is primarily characterized by x-ray diffraction and photoluminescence to understand the implications of crystalline imperfections on photovoltaic performance. Two major challenges facing the III-V nitride photovoltaic technology are phase separation within the material and high-contact resistances.

Original languageAmerican English
Article number132117
Number of pages3
JournalApplied Physics Letters
Issue number13
StatePublished - 2007

NREL Publication Number

  • NREL/JA-520-40437


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