Design and Demonstration of AlxIn1-xP Multiple Quantum Well Light-Emitting Diodes: Article No. 375501

Kirstin Alberi, Nikhil Pokharel, Andree Wibowo, Scott Ahrenkiel, Brian Fluegel, John Mangum, Anthony Rice, Harvey Guthrey, Matthew Young, Chris Stender

Research output: Contribution to journalArticlepeer-review

2 Scopus Citations

Abstract

Direct bandgap AlxIn1-xP alloys offer an advantage for red and amber light-emitting diode (LED) operation over conventional (AlxGa1-x)0.5In0.5P alloys due to their higher direct bandgap energies. However, the coupled variation of its bandgap energy and lattice constant present challenges for fabricating quantum well-based LED devices on GaAs substrates. Here, we present the design and demonstration of AlxIn1-xP red and amber LEDs incorporating multiple quantum well structures. Strain balancing the quantum well layers and manipulating the AlxIn1-xP conduction band energy through control of spontaneous atomic ordering produce structures with higher electron confinement barriers than comparable (AlxGa1-x)0.5In0.5P LEDs. We also discuss future improvements that must be made to realize high efficiency red and amber LEDs.
Original languageAmerican English
Number of pages12
JournalJournal of Physics D: Applied Physics
Volume54
Issue number37
DOIs
StatePublished - 2021

NREL Publication Number

  • NREL/JA-5K00-79202

Keywords

  • AlInP
  • light-emitting diode

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