Design, Growth, Fabrication and Characterization of High-Band Gap InGaN/GaN Solar Cells

Omkar Jani; Christiana Honsberg; Yong Huang; June O. Song; Ian Ferguson; Gon Namkoong; Elaissa Trybus; Alan Doolittle; Sarah Kurtz

doi:10.1109/WCPEC.2006.279337

Design, Growth, Fabrication and Characterization of High-Band Gap InGaN/GaN Solar Cells

Omkar Jani, Christiana Honsberg, Yong Huang, June O. Song, Ian Ferguson, Gon Namkoong, Elaissa Trybus, Alan Doolittle, Sarah Kurtz

Materials Science

Research output: Contribution to conference › Paper › peer-review

29 Scopus Citations

Abstract

One of the key requirements to achieve solar conversion efficiencies greater than 50% is a photovoltaic device with a band gap of 2.4 eV or greater. In_xGa_1-xN is one of a few alloys that can meet this key requirement. InGaN with indium compositions varying from 0 to 40% is grown by both metal-organic, chemical-vapor deposition (MOCVD) and molecular beam epitaxy (MBE), and studied for suitability in photovoltaic applications. Structural characterization is done using X-ray diffraction, while optical properties are measured using photoluminescence and absorption-transmission measurements. These material properties are used to design various configurations of solar cells in PC1D. Solar cells are grown and fabricated using methods derived from the III-N LED and photodetector technologies. The fabricated solar cells have open-circuit voltages around 2.4 V and internal quantum efficiencies as high as 60%. Major loss mechanisms in these devices are identified and methods to further improve efficiencies are discussed.

Original language	American English
Pages	20-25
Number of pages	6
DOIs	https://doi.org/10.1109/WCPEC.2006.279337 https://doi.org/10.1109/WCPEC.2006.279337
State	Published - 2006
Event	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States Duration: 7 May 2006 → 12 May 2006

Conference

Conference	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Country/Territory	United States
City	Waikoloa, HI
Period	7/05/06 → 12/05/06

NREL Publication Number

NREL/CP-520-39949

Access to Document

Cite this

Jani, O., Honsberg, C., Huang, Y., Song, J. O., Ferguson, I., Namkoong, G., Trybus, E., Doolittle, A., & Kurtz, S. (2006). Design, Growth, Fabrication and Characterization of High-Band Gap InGaN/GaN Solar Cells. 20-25. Paper presented at 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States. https://doi.org/10.1109/WCPEC.2006.279337, https://doi.org/10.1109/WCPEC.2006.279337

@conference{3f310a8497bd4a80b3c22a19c9988fea,

title = "Design, Growth, Fabrication and Characterization of High-Band Gap InGaN/GaN Solar Cells",

abstract = "One of the key requirements to achieve solar conversion efficiencies greater than 50% is a photovoltaic device with a band gap of 2.4 eV or greater. InxGa1-xN is one of a few alloys that can meet this key requirement. InGaN with indium compositions varying from 0 to 40% is grown by both metal-organic, chemical-vapor deposition (MOCVD) and molecular beam epitaxy (MBE), and studied for suitability in photovoltaic applications. Structural characterization is done using X-ray diffraction, while optical properties are measured using photoluminescence and absorption-transmission measurements. These material properties are used to design various configurations of solar cells in PC1D. Solar cells are grown and fabricated using methods derived from the III-N LED and photodetector technologies. The fabricated solar cells have open-circuit voltages around 2.4 V and internal quantum efficiencies as high as 60%. Major loss mechanisms in these devices are identified and methods to further improve efficiencies are discussed.",

author = "Omkar Jani and Christiana Honsberg and Yong Huang and Song, {June O.} and Ian Ferguson and Gon Namkoong and Elaissa Trybus and Alan Doolittle and Sarah Kurtz",

year = "2006",

doi = "10.1109/WCPEC.2006.279337",

language = "American English",

pages = "20--25",

note = "2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 ; Conference date: 07-05-2006 Through 12-05-2006",

}

Jani, O, Honsberg, C, Huang, Y, Song, JO, Ferguson, I, Namkoong, G, Trybus, E, Doolittle, A & Kurtz, S 2006, 'Design, Growth, Fabrication and Characterization of High-Band Gap InGaN/GaN Solar Cells', Paper presented at 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States, 7/05/06 - 12/05/06 pp. 20-25. https://doi.org/10.1109/WCPEC.2006.279337, https://doi.org/10.1109/WCPEC.2006.279337

TY - CONF

T1 - Design, Growth, Fabrication and Characterization of High-Band Gap InGaN/GaN Solar Cells

AU - Jani, Omkar

AU - Honsberg, Christiana

AU - Huang, Yong

AU - Song, June O.

AU - Ferguson, Ian

AU - Namkoong, Gon

AU - Trybus, Elaissa

AU - Doolittle, Alan

AU - Kurtz, Sarah

PY - 2006

Y1 - 2006

N2 - One of the key requirements to achieve solar conversion efficiencies greater than 50% is a photovoltaic device with a band gap of 2.4 eV or greater. InxGa1-xN is one of a few alloys that can meet this key requirement. InGaN with indium compositions varying from 0 to 40% is grown by both metal-organic, chemical-vapor deposition (MOCVD) and molecular beam epitaxy (MBE), and studied for suitability in photovoltaic applications. Structural characterization is done using X-ray diffraction, while optical properties are measured using photoluminescence and absorption-transmission measurements. These material properties are used to design various configurations of solar cells in PC1D. Solar cells are grown and fabricated using methods derived from the III-N LED and photodetector technologies. The fabricated solar cells have open-circuit voltages around 2.4 V and internal quantum efficiencies as high as 60%. Major loss mechanisms in these devices are identified and methods to further improve efficiencies are discussed.

AB - One of the key requirements to achieve solar conversion efficiencies greater than 50% is a photovoltaic device with a band gap of 2.4 eV or greater. InxGa1-xN is one of a few alloys that can meet this key requirement. InGaN with indium compositions varying from 0 to 40% is grown by both metal-organic, chemical-vapor deposition (MOCVD) and molecular beam epitaxy (MBE), and studied for suitability in photovoltaic applications. Structural characterization is done using X-ray diffraction, while optical properties are measured using photoluminescence and absorption-transmission measurements. These material properties are used to design various configurations of solar cells in PC1D. Solar cells are grown and fabricated using methods derived from the III-N LED and photodetector technologies. The fabricated solar cells have open-circuit voltages around 2.4 V and internal quantum efficiencies as high as 60%. Major loss mechanisms in these devices are identified and methods to further improve efficiencies are discussed.

UR - http://www.scopus.com/inward/record.url?scp=41749125930&partnerID=8YFLogxK

U2 - 10.1109/WCPEC.2006.279337

DO - 10.1109/WCPEC.2006.279337

M3 - Paper

AN - SCOPUS:41749125930

SP - 20

EP - 25

T2 - 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

Y2 - 7 May 2006 through 12 May 2006

ER -

Design, Growth, Fabrication and Characterization of High-Band Gap InGaN/GaN Solar Cells

Abstract

Conference

NREL Publication Number

Access to Document

Other files and links

Fingerprint

Cite this