Design of High Efficiency Solar Cells by Photoluminescence Studies

R. K. Ahrenkiel; D. J. Dunlavy; B. M. Keyes; S. M. Vernon; S. P. Tobin; T. M. Dixon

Design of High Efficiency Solar Cells by Photoluminescence Studies

R. K. Ahrenkiel, D. J. Dunlavy, B. M. Keyes, S. M. Vernon, S. P. Tobin, T. M. Dixon

Research output: Contribution to conference › Paper › peer-review

8 Scopus Citations

Abstract

A metalorganic chemical vapor deposition (MOCVD) Al_xGa_1-xAs passivated GaAs single-junction solar cell with AM1.5 efficiency of 24.8% was recently constituted. Growth process research was greatly expedited by complementary time-resolved photoluminescence measurements on double heterostructures. The latter simulated the active regions of the solar cell and produced values of the minority carrier lifetime and interface recombination velocity of the components of the solar cell. Photon recycling was shown to be a significant process in the effective lifetime of the various structures. Interface recombination was found to limit the lifetime in materials grown at temperatures below 740°C.

Original language	American English
Pages	432-436
Number of pages	5
State	Published - May 1990
Event	Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2) - Kissimimee, FL, USA Duration: 21 May 1990 → 25 May 1990

Conference

Conference	Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2)
City	Kissimimee, FL, USA
Period	21/05/90 → 25/05/90

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado, and Spire Corporation, Bedford, Massachusetts

NREL Publication Number

ACNR/CP-213-11767

Cite this

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title = "Design of High Efficiency Solar Cells by Photoluminescence Studies",

abstract = "A metalorganic chemical vapor deposition (MOCVD) AlxGa1-xAs passivated GaAs single-junction solar cell with AM1.5 efficiency of 24.8% was recently constituted. Growth process research was greatly expedited by complementary time-resolved photoluminescence measurements on double heterostructures. The latter simulated the active regions of the solar cell and produced values of the minority carrier lifetime and interface recombination velocity of the components of the solar cell. Photon recycling was shown to be a significant process in the effective lifetime of the various structures. Interface recombination was found to limit the lifetime in materials grown at temperatures below 740°C.",

author = "Ahrenkiel, {R. K.} and Dunlavy, {D. J.} and Keyes, {B. M.} and Vernon, {S. M.} and Tobin, {S. P.} and Dixon, {T. M.}",

note = "Work performed by Solar Energy Research Institute, Golden, Colorado, and Spire Corporation, Bedford, Massachusetts; Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2) ; Conference date: 21-05-1990 Through 25-05-1990",

year = "1990",

month = may,

language = "American English",

pages = "432--436",

}

TY - CONF

T1 - Design of High Efficiency Solar Cells by Photoluminescence Studies

AU - Ahrenkiel, R. K.

AU - Dunlavy, D. J.

AU - Keyes, B. M.

AU - Vernon, S. M.

AU - Tobin, S. P.

AU - Dixon, T. M.

N1 - Work performed by Solar Energy Research Institute, Golden, Colorado, and Spire Corporation, Bedford, Massachusetts

PY - 1990/5

Y1 - 1990/5

N2 - A metalorganic chemical vapor deposition (MOCVD) AlxGa1-xAs passivated GaAs single-junction solar cell with AM1.5 efficiency of 24.8% was recently constituted. Growth process research was greatly expedited by complementary time-resolved photoluminescence measurements on double heterostructures. The latter simulated the active regions of the solar cell and produced values of the minority carrier lifetime and interface recombination velocity of the components of the solar cell. Photon recycling was shown to be a significant process in the effective lifetime of the various structures. Interface recombination was found to limit the lifetime in materials grown at temperatures below 740°C.

AB - A metalorganic chemical vapor deposition (MOCVD) AlxGa1-xAs passivated GaAs single-junction solar cell with AM1.5 efficiency of 24.8% was recently constituted. Growth process research was greatly expedited by complementary time-resolved photoluminescence measurements on double heterostructures. The latter simulated the active regions of the solar cell and produced values of the minority carrier lifetime and interface recombination velocity of the components of the solar cell. Photon recycling was shown to be a significant process in the effective lifetime of the various structures. Interface recombination was found to limit the lifetime in materials grown at temperatures below 740°C.

UR - http://www.scopus.com/inward/record.url?scp=0025421085&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0025421085

SP - 432

EP - 436

T2 - Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2)

Y2 - 21 May 1990 through 25 May 1990

ER -

Design of High Efficiency Solar Cells by Photoluminescence Studies

Abstract

Conference

Bibliographical note

NREL Publication Number

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