Abstract
This paper describes approaches to lower the acceptor ionization energy in ZnO by codoping acceptors with donor or isovalent atoms and proposes a universal approach to overcome the doping polarity problem for wide-band-gap semiconductors.
| Original language | American English |
|---|---|
| Number of pages | 7 |
| State | Published - 2008 |
| Event | 33rd IEEE Photovoltaic Specialists Conference - San Diego, California Duration: 11 May 2008 → 16 May 2008 |
Conference
| Conference | 33rd IEEE Photovoltaic Specialists Conference |
|---|---|
| City | San Diego, California |
| Period | 11/05/08 → 16/05/08 |
NREL Publication Number
- NREL/CP-590-42522
Keywords
- impurities
- ionization energy
- metal oxides
- PV
- semiconductor
- solar cells
- transparent conducting oxides (TCO)
- wide band gap
- zinc oxide