Design of Shallow P-Type Dopants in ZnO: Preprint

Research output: Contribution to conferencePaper


This paper describes approaches to lower the acceptor ionization energy in ZnO by codoping acceptors with donor or isovalent atoms and proposes a universal approach to overcome the doping polarity problem for wide-band-gap semiconductors.
Original languageAmerican English
Number of pages7
StatePublished - 2008
Event33rd IEEE Photovoltaic Specialists Conference - San Diego, California
Duration: 11 May 200816 May 2008


Conference33rd IEEE Photovoltaic Specialists Conference
CitySan Diego, California

NREL Publication Number

  • NREL/CP-590-42522


  • impurities
  • ionization energy
  • metal oxides
  • PV
  • semiconductor
  • solar cells
  • transparent conducting oxides (TCO)
  • wide band gap
  • zinc oxide


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