Abstract
Ultra-broadband Antireflection Coatings (ARCs) are essential to realizing the potential efficiency gains of four-junction photovoltaic devices that absorb to longer wavelengths than state-of-the-art three-junction cells. In this work, we examine a novel design that integrates a nanostructured antireflection layer with a multilayer ARC. Using optical models, we find that this hybrid approach can reduce the reflected AM1.5D power by 10-45 W/m2 compared to conventional thin-film ARCs. A hybrid ARC is designed and fabricated on a sample consisting of approximately 1μm of indium gallium phosphide (InGaP) on gallium arsenide (GaAs). For the hybrid coating, we measure a reflection loss of just 23.9 W/m2 corresponding to less than a 3% power reflection.
Original language | American English |
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Pages | 1902-1906 |
Number of pages | 5 |
DOIs | |
State | Published - 2013 |
Event | 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States Duration: 16 Jun 2013 → 21 Jun 2013 |
Conference
Conference | 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 |
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Country/Territory | United States |
City | Tampa, FL |
Period | 16/06/13 → 21/06/13 |
NREL Publication Number
- NREL/CP-5200-61950
Keywords
- Biomimetics
- III-V semiconductor materials
- Nanophotonics
- Optical films
- Photovoltaic cells
- Solar energy