Abstract
This paper focuses on the design of a bidirectional dual active bridge (DAB) DC/DC converter that utilizes Gallium Nitride (GaN) switches as active components. In the existing literature, MOSFET-based DAB for active cell balancing is available, but GaN-based DAB converter for active cell balancing is still new. The proposed modular isolated GaN-based DAB converter is designed as an individual module of active cell balancing for behind-the-meter storage (BTMS) applications, targeting high-power charging stations. Modular isolated converters are connected to each cell (low voltage bus), and each cell is connected in series to build up a battery module. According to the reference current command of supervisory control, each DAB converter can transfer power back and forth through the high voltage (HV) bus to balance the State of Charge (SoC) between the cells. Each module DAB converter is designed at a 50 W power rating. Switch power and transformer losses are analyzed for different switching frequencies, showing the optimum switching frequency for minimum losses. Furthermore, the procedure to select the required gate driver and the PCB layout optimization are discussed. Finally, the DAB performance analysis of GaN-based DAB and Si-based DAB is provided for a battery module operating with a LiFeMnPO4 prismatic cell with 3.2V 20Ah rated values.
Original language | American English |
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Pages | 434-441 |
Number of pages | 8 |
DOIs | |
State | Published - 2023 |
Event | IEEE Energy Conversion Congress and Exposition - Nashville Duration: 29 Oct 2023 → 2 Nov 2023 |
Conference
Conference | IEEE Energy Conversion Congress and Exposition |
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City | Nashville |
Period | 29/10/23 → 2/11/23 |
Bibliographical note
See NREL/CP-5400-87899 for preprintNREL Publication Number
- NREL/CP-5400-88807
Keywords
- active cell balancing
- behind-the-meter storage
- bidirectional DC/DC converter
- dual active bridge
- field effect transistor
- gallium nitride
- LiFeMnPO4 prismatic cell
- state of charge