Detailed Analysis and Performance Limiting Mechanism of Si Delta-Doped GaAs Tunnel Diode Grown by MBE: Article No. 120306

Kwangwook Park, Seokjin Kang, Gun Ju, Jung-Wook Min, Dong-Seon Lee, Yong Lee, Hyo Kim

Research output: Contribution to journalArticlepeer-review

3 Scopus Citations

Abstract

High-performance GaAs tunnel diodes (TDs) are fabricated by using Si delta-doping technique. The GaAs TDs exhibited a high peak tunnel-current density of 2,735 A/cm2 and low specific resistivity of 1.46 x 10-4 ..omega..cm2. However, the performance of the GaAs TDs deteriorated once the amount of Si delta doping exceeded a certain limit, which has been rarely reported elsewhere. Detailed analyses and numerical simulations of GaAs TDs with various amounts of Si delta doping prove that Si amphoteric behavior governs the performance limit. GaAs TDs with precisely controlled Si delta doping are suitable for cutting-edge tandem solar cell applications.
Original languageAmerican English
Number of pages5
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume57
Issue number12
DOIs
StatePublished - 2018

NREL Publication Number

  • NREL/JA-5K00-72972

Keywords

  • gallium arsenide
  • III-V semiconductors
  • semiconducting gallium
  • tunnel diodes

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