Detailed Analysis and Performance Limiting Mechanism of Si Delta-Doped GaAs Tunnel Diode Grown by MBE: Article No. 120306

Kwangwook Park; Seokjin Kang; Gun Ju; Jung-Wook Min; Dong-Seon Lee; Yong Lee; Hyo Kim

doi:10.7567/JJAP.57.120306

Detailed Analysis and Performance Limiting Mechanism of Si Delta-Doped GaAs Tunnel Diode Grown by MBE: Article No. 120306

Kwangwook Park, Seokjin Kang, Gun Ju, Jung-Wook Min, Dong-Seon Lee, Yong Lee, Hyo Kim

Materials Science

Research output: Contribution to journal › Article › peer-review

4 Scopus Citations

Abstract

High-performance GaAs tunnel diodes (TDs) are fabricated by using Si delta-doping technique. The GaAs TDs exhibited a high peak tunnel-current density of 2,735 A/cm2 and low specific resistivity of 1.46 x 10-4 ..omega..cm2. However, the performance of the GaAs TDs deteriorated once the amount of Si delta doping exceeded a certain limit, which has been rarely reported elsewhere. Detailed analyses and numerical simulations of GaAs TDs with various amounts of Si delta doping prove that Si amphoteric behavior governs the performance limit. GaAs TDs with precisely controlled Si delta doping are suitable for cutting-edge tandem solar cell applications.

Original language	American English
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	57
Issue number	12
DOIs	https://doi.org/10.7567/JJAP.57.120306
State	Published - 2018

NREL Publication Number

NREL/JA-5K00-72972

Keywords

gallium arsenide
III-V semiconductors
semiconducting gallium
tunnel diodes

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10.7567/JJAP.57.120306

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title = "Detailed Analysis and Performance Limiting Mechanism of Si Delta-Doped GaAs Tunnel Diode Grown by MBE: Article No. 120306",

abstract = "High-performance GaAs tunnel diodes (TDs) are fabricated by using Si delta-doping technique. The GaAs TDs exhibited a high peak tunnel-current density of 2,735 A/cm2 and low specific resistivity of 1.46 x 10-4 ..omega..cm2. However, the performance of the GaAs TDs deteriorated once the amount of Si delta doping exceeded a certain limit, which has been rarely reported elsewhere. Detailed analyses and numerical simulations of GaAs TDs with various amounts of Si delta doping prove that Si amphoteric behavior governs the performance limit. GaAs TDs with precisely controlled Si delta doping are suitable for cutting-edge tandem solar cell applications.",

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T1 - Detailed Analysis and Performance Limiting Mechanism of Si Delta-Doped GaAs Tunnel Diode Grown by MBE

T2 - Article No. 120306

AU - Park, Kwangwook

AU - Kang, Seokjin

AU - Ju, Gun

AU - Min, Jung-Wook

AU - Lee, Dong-Seon

AU - Lee, Yong

AU - Kim, Hyo

PY - 2018

Y1 - 2018

N2 - High-performance GaAs tunnel diodes (TDs) are fabricated by using Si delta-doping technique. The GaAs TDs exhibited a high peak tunnel-current density of 2,735 A/cm2 and low specific resistivity of 1.46 x 10-4 ..omega..cm2. However, the performance of the GaAs TDs deteriorated once the amount of Si delta doping exceeded a certain limit, which has been rarely reported elsewhere. Detailed analyses and numerical simulations of GaAs TDs with various amounts of Si delta doping prove that Si amphoteric behavior governs the performance limit. GaAs TDs with precisely controlled Si delta doping are suitable for cutting-edge tandem solar cell applications.

AB - High-performance GaAs tunnel diodes (TDs) are fabricated by using Si delta-doping technique. The GaAs TDs exhibited a high peak tunnel-current density of 2,735 A/cm2 and low specific resistivity of 1.46 x 10-4 ..omega..cm2. However, the performance of the GaAs TDs deteriorated once the amount of Si delta doping exceeded a certain limit, which has been rarely reported elsewhere. Detailed analyses and numerical simulations of GaAs TDs with various amounts of Si delta doping prove that Si amphoteric behavior governs the performance limit. GaAs TDs with precisely controlled Si delta doping are suitable for cutting-edge tandem solar cell applications.

KW - gallium arsenide

KW - III-V semiconductors

KW - semiconducting gallium

KW - tunnel diodes

U2 - 10.7567/JJAP.57.120306

DO - 10.7567/JJAP.57.120306

M3 - Article

SN - 0021-4922

VL - 57

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 12

ER -

Detailed Analysis and Performance Limiting Mechanism of Si Delta-Doped GaAs Tunnel Diode Grown by MBE: Article No. 120306

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Keywords

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