Detailed Carrier Recombination in Lateral Composition Modulation Structure: Article No. 095801

Kwangwook Park; Sooraj Ravindran; Seokjin Kang; Jung-Wook Min; Hyeong-Yong Hwang; Young-Dahl Jho; Yong-Ryun Jo; Bong-Joong Kim; Jongmin Kim; Yong-Tak Lee

doi:10.7567/APEX.11.095801

Detailed Carrier Recombination in Lateral Composition Modulation Structure: Article No. 095801

Kwangwook Park, Sooraj Ravindran, Seokjin Kang, Jung-Wook Min, Hyeong-Yong Hwang, Young-Dahl Jho, Yong-Ryun Jo, Bong-Joong Kim, Jongmin Kim, Yong-Tak Lee

Materials Science

Research output: Contribution to journal › Article › peer-review

2 Scopus Citations

Abstract

Carrier recombination in lateral composition modulation (LCM) GaInP was probed in detail using time-resolved photoluminescence (TR-PL) and transmission electron microscopy (TEM). Upon SiO2 passivation, the time-transient decay of the PL peak was slower, and carrier lifetime was significantly enhanced from 25 to 230 ps for passivated LCM GaInP in comparison with that of bulk GaInP. This is due to the suppressed surface recombination of the irregular and wavy surface of LCM GaInP observed by TEM. Temperature-dependent TR-PL also showed a large decrease in carrier lifetime with an increase in temperature, indicating the dominance of Shockley-Read-Hall recombination due to the nonperiodicity of the LCM structure.

Original language	American English
Number of pages	5
Journal	Applied Physics Express
Volume	11
Issue number	9
DOIs	https://doi.org/10.7567/APEX.11.095801
State	Published - 2018

NREL Publication Number

NREL/JA-5K00-72512

Keywords

lateral composition modulation
semiconductors
superlattices

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10.7567/APEX.11.095801

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title = "Detailed Carrier Recombination in Lateral Composition Modulation Structure: Article No. 095801",

abstract = "Carrier recombination in lateral composition modulation (LCM) GaInP was probed in detail using time-resolved photoluminescence (TR-PL) and transmission electron microscopy (TEM). Upon SiO2 passivation, the time-transient decay of the PL peak was slower, and carrier lifetime was significantly enhanced from 25 to 230 ps for passivated LCM GaInP in comparison with that of bulk GaInP. This is due to the suppressed surface recombination of the irregular and wavy surface of LCM GaInP observed by TEM. Temperature-dependent TR-PL also showed a large decrease in carrier lifetime with an increase in temperature, indicating the dominance of Shockley-Read-Hall recombination due to the nonperiodicity of the LCM structure.",

keywords = "lateral composition modulation, semiconductors, superlattices",

author = "Kwangwook Park and Sooraj Ravindran and Seokjin Kang and Jung-Wook Min and Hyeong-Yong Hwang and Young-Dahl Jho and Yong-Ryun Jo and Bong-Joong Kim and Jongmin Kim and Yong-Tak Lee",

year = "2018",

doi = "10.7567/APEX.11.095801",

language = "American English",

volume = "11",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "9",

}

TY - JOUR

T1 - Detailed Carrier Recombination in Lateral Composition Modulation Structure

T2 - Article No. 095801

AU - Park, Kwangwook

AU - Ravindran, Sooraj

AU - Kang, Seokjin

AU - Min, Jung-Wook

AU - Hwang, Hyeong-Yong

AU - Jho, Young-Dahl

AU - Jo, Yong-Ryun

AU - Kim, Bong-Joong

AU - Kim, Jongmin

AU - Lee, Yong-Tak

PY - 2018

Y1 - 2018

N2 - Carrier recombination in lateral composition modulation (LCM) GaInP was probed in detail using time-resolved photoluminescence (TR-PL) and transmission electron microscopy (TEM). Upon SiO2 passivation, the time-transient decay of the PL peak was slower, and carrier lifetime was significantly enhanced from 25 to 230 ps for passivated LCM GaInP in comparison with that of bulk GaInP. This is due to the suppressed surface recombination of the irregular and wavy surface of LCM GaInP observed by TEM. Temperature-dependent TR-PL also showed a large decrease in carrier lifetime with an increase in temperature, indicating the dominance of Shockley-Read-Hall recombination due to the nonperiodicity of the LCM structure.

AB - Carrier recombination in lateral composition modulation (LCM) GaInP was probed in detail using time-resolved photoluminescence (TR-PL) and transmission electron microscopy (TEM). Upon SiO2 passivation, the time-transient decay of the PL peak was slower, and carrier lifetime was significantly enhanced from 25 to 230 ps for passivated LCM GaInP in comparison with that of bulk GaInP. This is due to the suppressed surface recombination of the irregular and wavy surface of LCM GaInP observed by TEM. Temperature-dependent TR-PL also showed a large decrease in carrier lifetime with an increase in temperature, indicating the dominance of Shockley-Read-Hall recombination due to the nonperiodicity of the LCM structure.

KW - lateral composition modulation

KW - semiconductors

KW - superlattices

U2 - 10.7567/APEX.11.095801

DO - 10.7567/APEX.11.095801

M3 - Article

SN - 1882-0778

VL - 11

JO - Applied Physics Express

JF - Applied Physics Express

IS - 9

ER -

Detailed Carrier Recombination in Lateral Composition Modulation Structure: Article No. 095801

Abstract

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Keywords

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