Detailed Characterization of AR Coatings on Si Solar Cells: A New Application of GT-FabScan 6000; Preprint

Research output: Contribution to conferencePaper

Abstract

We have developed a new application of GT-FabScan for rapid mapping of AR coatings on Si solar cells. The system generates an image of the AR thickness and presents it in a color format using false colors. This measurement is made in less than 100 ms. The development of this application enables the system to generate thickness maps of the AR coating to determine the repeatability of thedeposition system, as well as to ensure that downstream processing can be controlled. These data can also be used to determine the average thickness of the coating. Downstream processing is an important issue in current solar cell technology (as discussed below). This paper describes its importance to the PV industry and discusses the principles and method of this measurement.
Original languageAmerican English
Number of pages9
StatePublished - 2004
Event14th Workshop on Crystalline Silicon Solar Cells and Modules - Winter Park, Colorado
Duration: 8 Aug 200411 Aug 2004

Conference

Conference14th Workshop on Crystalline Silicon Solar Cells and Modules
CityWinter Park, Colorado
Period8/08/0411/08/04

NREL Publication Number

  • NREL/CP-520-36664

Keywords

  • crystal growth
  • crystalline silicon (x-Si) (c-Si)
  • defects
  • device process
  • impurities
  • materials and processes
  • microelectronics
  • module
  • passivation
  • photovoltaics (PV)
  • solar cells

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