Detailed Characterization of Si Substrates and Solar Cells with High-Speed PVSCAN

Detailed Characterization of Si Substrates and Solar Cells with High-Speed PVSCAN

Research output: Contribution to conference › Paper

Abstract

This paper describes some applications of PVSCAN-an instrument developed for rapid characterization of photovoltaic (PV) mateirals and devices. It measures defect distribution, reflectance, and external and internal responses of light beam induced current at two wavelengths of optical excitation.

Original language	American English
Pages	183-184
Number of pages	2
State	Published - 2000
Event	Program and NCPV Program Review Meeting 2000 - Denver, Colorado Duration: 16 Apr 2000 → 19 Apr 2000

Conference

Conference	Program and NCPV Program Review Meeting 2000
City	Denver, Colorado
Period	16/04/00 → 19/04/00

NREL Publication Number

NREL/CP-520-28268

Keywords

amorphous Si
applications
cadmium telluride (CdTe) photovoltaic solar cells modules
components
concentrators
copper indium diselenide (CIS)
crystalline silicon (x-Si) (c-Si)
manufacturing
markets
NCPV
photovoltaics (PV)
research and development (R&D)
systems
systems integration
thin films

Access to Document

https://www.nrel.gov/docs/fy00osti/28268.pdf

Cite this

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title = "Detailed Characterization of Si Substrates and Solar Cells with High-Speed PVSCAN",

abstract = "This paper describes some applications of PVSCAN-an instrument developed for rapid characterization of photovoltaic (PV) mateirals and devices. It measures defect distribution, reflectance, and external and internal responses of light beam induced current at two wavelengths of optical excitation.",

keywords = "amorphous Si, applications, cadmium telluride (CdTe) photovoltaic solar cells modules, components, concentrators, copper indium diselenide (CIS), crystalline silicon (x-Si) (c-Si), manufacturing, markets, NCPV, photovoltaics (PV), research and development (R&D), systems, systems integration, thin films",

author = "NREL",

year = "2000",

language = "American English",

pages = "183--184",

note = "Program and NCPV Program Review Meeting 2000 ; Conference date: 16-04-2000 Through 19-04-2000",

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TY - CONF

T1 - Detailed Characterization of Si Substrates and Solar Cells with High-Speed PVSCAN

AU - NREL, null

PY - 2000

Y1 - 2000

N2 - This paper describes some applications of PVSCAN-an instrument developed for rapid characterization of photovoltaic (PV) mateirals and devices. It measures defect distribution, reflectance, and external and internal responses of light beam induced current at two wavelengths of optical excitation.

AB - This paper describes some applications of PVSCAN-an instrument developed for rapid characterization of photovoltaic (PV) mateirals and devices. It measures defect distribution, reflectance, and external and internal responses of light beam induced current at two wavelengths of optical excitation.

KW - amorphous Si

KW - applications

KW - cadmium telluride (CdTe) photovoltaic solar cells modules

KW - components

KW - concentrators

KW - copper indium diselenide (CIS)

KW - crystalline silicon (x-Si) (c-Si)

KW - manufacturing

KW - markets

KW - NCPV

KW - photovoltaics (PV)

KW - research and development (R&D)

KW - systems

KW - systems integration

KW - thin films

M3 - Paper

SP - 183

EP - 184

T2 - Program and NCPV Program Review Meeting 2000

Y2 - 16 April 2000 through 19 April 2000

ER -

Detailed Characterization of Si Substrates and Solar Cells with High-Speed PVSCAN

Abstract

Conference

NREL Publication Number

Keywords

Access to Document

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Cite this