Determination of Free Carrier Concentration in n-GaInP Alloy by Raman Scattering

K. Sinha; A. Mascarenhas; Sarah R. Kurtz; J. M. Olson

doi:10.1063/1.360715

Determination of Free Carrier Concentration in n-GaInP Alloy by Raman Scattering

K. Sinha, A. Mascarenhas, Sarah R. Kurtz, J. M. Olson

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

13 Scopus Citations

Abstract

We present results of Raman scattering from coupled phonon-plasmon modes in Se-doped n-Ga_0.52In₀₄₈P alloy. Due to the small energy separation between the Γ- and the L-point conduction-band minima for this alloy composition, a significant fraction of the free carriers at room temperature are present in the L-conduction-band valley, giving rise to a multicomponent plasma. The carrier concentrations extracted from the Raman spectra for the different epilayers are in good agreement with the free electron concentrations determined by capacitance-voltage measurements. We employ the light scattering technique to extract the carrier concentration in the n-type emitter layer of a GaInP-based solar cell.

Original language	American English
Pages (from-to)	2515-2519
Number of pages	5
Journal	Journal of Applied Physics
Volume	78
Issue number	4
DOIs	https://doi.org/10.1063/1.360715 https://doi.org/10.1063/1.360715
State	Published - 1995

NREL Publication Number

NREL/JA-451-7485

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@article{cea0d0ffffba45a183b8a706f46bc1ee,

title = "Determination of Free Carrier Concentration in n-GaInP Alloy by Raman Scattering",

abstract = "We present results of Raman scattering from coupled phonon-plasmon modes in Se-doped n-Ga0.52In048P alloy. Due to the small energy separation between the Γ- and the L-point conduction-band minima for this alloy composition, a significant fraction of the free carriers at room temperature are present in the L-conduction-band valley, giving rise to a multicomponent plasma. The carrier concentrations extracted from the Raman spectra for the different epilayers are in good agreement with the free electron concentrations determined by capacitance-voltage measurements. We employ the light scattering technique to extract the carrier concentration in the n-type emitter layer of a GaInP-based solar cell.",

author = "K. Sinha and A. Mascarenhas and Kurtz, {Sarah R.} and Olson, {J. M.}",

year = "1995",

doi = "10.1063/1.360715",

language = "American English",

volume = "78",

pages = "2515--2519",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Determination of Free Carrier Concentration in n-GaInP Alloy by Raman Scattering

AU - Sinha, K.

AU - Mascarenhas, A.

AU - Kurtz, Sarah R.

AU - Olson, J. M.

PY - 1995

Y1 - 1995

N2 - We present results of Raman scattering from coupled phonon-plasmon modes in Se-doped n-Ga0.52In048P alloy. Due to the small energy separation between the Γ- and the L-point conduction-band minima for this alloy composition, a significant fraction of the free carriers at room temperature are present in the L-conduction-band valley, giving rise to a multicomponent plasma. The carrier concentrations extracted from the Raman spectra for the different epilayers are in good agreement with the free electron concentrations determined by capacitance-voltage measurements. We employ the light scattering technique to extract the carrier concentration in the n-type emitter layer of a GaInP-based solar cell.

AB - We present results of Raman scattering from coupled phonon-plasmon modes in Se-doped n-Ga0.52In048P alloy. Due to the small energy separation between the Γ- and the L-point conduction-band minima for this alloy composition, a significant fraction of the free carriers at room temperature are present in the L-conduction-band valley, giving rise to a multicomponent plasma. The carrier concentrations extracted from the Raman spectra for the different epilayers are in good agreement with the free electron concentrations determined by capacitance-voltage measurements. We employ the light scattering technique to extract the carrier concentration in the n-type emitter layer of a GaInP-based solar cell.

UR - http://www.scopus.com/inward/record.url?scp=0000776371&partnerID=8YFLogxK

U2 - 10.1063/1.360715

DO - 10.1063/1.360715

M3 - Article

AN - SCOPUS:0000776371

SN - 0021-8979

VL - 78

SP - 2515

EP - 2519

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

Determination of Free Carrier Concentration in n-GaInP Alloy by Raman Scattering

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