Determination of Free Carrier Concentration in n-GaInP Alloy by Raman Scattering

K. Sinha, A. Mascarenhas, Sarah R. Kurtz, J. M. Olson

Research output: Contribution to journalArticlepeer-review

13 Scopus Citations


We present results of Raman scattering from coupled phonon-plasmon modes in Se-doped n-Ga0.52In048P alloy. Due to the small energy separation between the Γ- and the L-point conduction-band minima for this alloy composition, a significant fraction of the free carriers at room temperature are present in the L-conduction-band valley, giving rise to a multicomponent plasma. The carrier concentrations extracted from the Raman spectra for the different epilayers are in good agreement with the free electron concentrations determined by capacitance-voltage measurements. We employ the light scattering technique to extract the carrier concentration in the n-type emitter layer of a GaInP-based solar cell.

Original languageAmerican English
Pages (from-to)2515-2519
Number of pages5
JournalJournal of Applied Physics
Issue number4
StatePublished - 1995

NREL Publication Number

  • NREL/JA-451-7485


Dive into the research topics of 'Determination of Free Carrier Concentration in n-GaInP Alloy by Raman Scattering'. Together they form a unique fingerprint.

Cite this