Determination of Grain Boundary Impurity Effects in Polycrystalline Silicon

L. L. Kazmerski; J. R. Dick

doi:10.1116/1.572685

Determination of Grain Boundary Impurity Effects in Polycrystalline Silicon

L. L. Kazmerski, J. R. Dick

Materials Science

National Renewable Energy Laboratory

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Abstract

The relationships between the chemistry and composition of the intergrain regions, and the optoelectronic properties of the grain boundaries are examined. Specifically, two impurity related mechanisms are reported. The first is the segregation of oxygen to the grain boundaries during thermal processing of the materials or devices. The oxygen localization at the boundary directly correlates with the electrical activation of these regions. The second is the passivation of the grain boundaries by incorporation of hydrogen in the intercrystalline regions. The localization of the hydrogen at these defects is demonstrated by SIMS, and the reaction between the hydrogen and the oxvgen is indicated.

Original language	American English
Pages (from-to)	1120-1122
Number of pages	3
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	2
Issue number	2
DOIs	https://doi.org/10.1116/1.572685 https://doi.org/10.1116/1.572685
State	Published - 1984

NREL Publication Number

ACNR/JA-213-3537

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AB - The relationships between the chemistry and composition of the intergrain regions, and the optoelectronic properties of the grain boundaries are examined. Specifically, two impurity related mechanisms are reported. The first is the segregation of oxygen to the grain boundaries during thermal processing of the materials or devices. The oxygen localization at the boundary directly correlates with the electrical activation of these regions. The second is the passivation of the grain boundaries by incorporation of hydrogen in the intercrystalline regions. The localization of the hydrogen at these defects is demonstrated by SIMS, and the reaction between the hydrogen and the oxvgen is indicated.

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Determination of Grain Boundary Impurity Effects in Polycrystalline Silicon

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