Determination of Spatial Uniformity by Ion Imaging with Secondary Ion Mass Spectrometry (SIMS)

Research output: Contribution to conferencePaper

Abstract

This paper discusses some of the problems associated with applying secondary ion mass spectrometry (SIMS) to non uniform solar cell materials from the characterization viewpoint. Two examples are given: depth profile analysis of contacts on III-V materials, and bulk analysis of processed silicon materials.
Original languageAmerican English
Number of pages6
StatePublished - 2003
EventNational Center for Photovoltaics (NCPV) and Solar Program Review Meeting - Denver, Colorado
Duration: 24 Mar 200326 Mar 2003

Conference

ConferenceNational Center for Photovoltaics (NCPV) and Solar Program Review Meeting
CityDenver, Colorado
Period24/03/0326/03/03

NREL Publication Number

  • NREL/CP-520-33592

Keywords

  • bulk analysis
  • characterizations
  • depth-profile analysis
  • II-V material
  • ion imaging
  • secondary ion mass spectrometry (SIMS)
  • silicon
  • solar cells
  • spatial uniformity

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