Abstract
This paper discusses some of the problems associated with applying secondary ion mass spectrometry (SIMS) to non uniform solar cell materials from the characterization viewpoint. Two examples are given: depth profile analysis of contacts on III-V materials, and bulk analysis of processed silicon materials.
| Original language | American English |
|---|---|
| Number of pages | 6 |
| State | Published - 2003 |
| Event | National Center for Photovoltaics (NCPV) and Solar Program Review Meeting - Denver, Colorado Duration: 24 Mar 2003 → 26 Mar 2003 |
Conference
| Conference | National Center for Photovoltaics (NCPV) and Solar Program Review Meeting |
|---|---|
| City | Denver, Colorado |
| Period | 24/03/03 → 26/03/03 |
NREL Publication Number
- NREL/CP-520-33592
Keywords
- bulk analysis
- characterizations
- depth-profile analysis
- II-V material
- ion imaging
- secondary ion mass spectrometry (SIMS)
- silicon
- solar cells
- spatial uniformity