Determination of the Carrier Concentration in InGaAsN/GaAs Single Quantum Wells Using Raman Scattering

Patrick A. Grandt; Aureus E. Griffith; M. O. Manasreh; D. J. Friedman; S. Doǧan; D. Johnstone

doi:10.1063/1.1823014

Determination of the Carrier Concentration in InGaAsN/GaAs Single Quantum Wells Using Raman Scattering

Patrick A. Grandt, Aureus E. Griffith, M. O. Manasreh, D. J. Friedman, S. Doǧan, D. Johnstone

Chemistry and Nanoscience

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Abstract

Raman scattering from longitudinal optical phonon-plasmon coupled mode was observed in a series of InGaAsNGaAs single quantum well samples grown by metalorganic vapor phase epitaxy. The phonon-plasmon mode spectra were fitted with the dielectric constant function based on Drude model that contains contributions from both lattice vibrations and conduction electrons. The carrier concentration is calculated directly from the plasmon frequency, which is obtained from the fitting procedure. An empirical expression for the electron concentration, [n], in InGaAsNGaAs samples is determined as [n] ≈ {2.35× 1016 (ωm -502)} cm-3, where ωm is the peak of the upper frequency branch, L+, of the phonon-plasmon mode measured in unit of cm-1. The phonon-plasmon coupled mode was also investigated in rapid thermally annealed samples.

Original language	American English
Pages (from-to)	4905-4907
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	21
DOIs	https://doi.org/10.1063/1.1823014 https://doi.org/10.1063/1.1823014
State	Published - Nov 2004

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NREL/JA-520-37860

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title = "Determination of the Carrier Concentration in InGaAsN/GaAs Single Quantum Wells Using Raman Scattering",

abstract = "Raman scattering from longitudinal optical phonon-plasmon coupled mode was observed in a series of InGaAsNGaAs single quantum well samples grown by metalorganic vapor phase epitaxy. The phonon-plasmon mode spectra were fitted with the dielectric constant function based on Drude model that contains contributions from both lattice vibrations and conduction electrons. The carrier concentration is calculated directly from the plasmon frequency, which is obtained from the fitting procedure. An empirical expression for the electron concentration, [n], in InGaAsNGaAs samples is determined as [n] ≈ {2.35× 1016 (ωm -502)} cm-3, where ωm is the peak of the upper frequency branch, L+, of the phonon-plasmon mode measured in unit of cm-1. The phonon-plasmon coupled mode was also investigated in rapid thermally annealed samples.",

author = "Grandt, {Patrick A.} and Griffith, {Aureus E.} and Manasreh, {M. O.} and Friedman, {D. J.} and S. Doǧan and D. Johnstone",

year = "2004",

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doi = "10.1063/1.1823014",

language = "American English",

volume = "85",

pages = "4905--4907",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Determination of the Carrier Concentration in InGaAsN/GaAs Single Quantum Wells Using Raman Scattering

AU - Grandt, Patrick A.

AU - Griffith, Aureus E.

AU - Manasreh, M. O.

AU - Friedman, D. J.

AU - Doǧan, S.

AU - Johnstone, D.

PY - 2004/11

Y1 - 2004/11

N2 - Raman scattering from longitudinal optical phonon-plasmon coupled mode was observed in a series of InGaAsNGaAs single quantum well samples grown by metalorganic vapor phase epitaxy. The phonon-plasmon mode spectra were fitted with the dielectric constant function based on Drude model that contains contributions from both lattice vibrations and conduction electrons. The carrier concentration is calculated directly from the plasmon frequency, which is obtained from the fitting procedure. An empirical expression for the electron concentration, [n], in InGaAsNGaAs samples is determined as [n] ≈ {2.35× 1016 (ωm -502)} cm-3, where ωm is the peak of the upper frequency branch, L+, of the phonon-plasmon mode measured in unit of cm-1. The phonon-plasmon coupled mode was also investigated in rapid thermally annealed samples.

AB - Raman scattering from longitudinal optical phonon-plasmon coupled mode was observed in a series of InGaAsNGaAs single quantum well samples grown by metalorganic vapor phase epitaxy. The phonon-plasmon mode spectra were fitted with the dielectric constant function based on Drude model that contains contributions from both lattice vibrations and conduction electrons. The carrier concentration is calculated directly from the plasmon frequency, which is obtained from the fitting procedure. An empirical expression for the electron concentration, [n], in InGaAsNGaAs samples is determined as [n] ≈ {2.35× 1016 (ωm -502)} cm-3, where ωm is the peak of the upper frequency branch, L+, of the phonon-plasmon mode measured in unit of cm-1. The phonon-plasmon coupled mode was also investigated in rapid thermally annealed samples.

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DO - 10.1063/1.1823014

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Determination of the Carrier Concentration in InGaAsN/GaAs Single Quantum Wells Using Raman Scattering

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