Determination of the Critical Value of Xc for the Direct-to-Indirect Band-Gap Transition in AlxGa1-xAs by Measuring Hot-Carrier Dynamics in the X Valley

W. B. Wang; R. R. Alfano; D. Szmyd; A. J. Nozik

doi:10.1103/PhysRevB.46.15828

Determination of the Critical Value of Xc for the Direct-to-Indirect Band-Gap Transition in AlxGa1-xAs by Measuring Hot-Carrier Dynamics in the X Valley

W. B. Wang, R. R. Alfano, D. Szmyd, A. J. Nozik

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

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Abstract

The time evolution of the population of hot electrons in the satellite X valley in AlxGa1-xAs was measured by femtosecond pump-probe infrared (IR)-absorption spectroscopy. The dynamics of the X-valley electrons for samples with x0.408 was found to be different from that for samples with x0.439 which reflects their different types of band gaps. The critical value of xc that corresponds to the direct-to-indirect band-gap transition for AlxGa1-xAs was determined to be 0.4120.009 from the composition dependence of the induced IR absorption.

Original language	American English
Pages (from-to)	15828-15832
Number of pages	5
Journal	Physical Review B
Volume	46
Issue number	24
DOIs	https://doi.org/10.1103/PhysRevB.46.15828 https://doi.org/10.1103/PhysRevB.46.15828
State	Published - 1992

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ACNR/JA-16170

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title = "Determination of the Critical Value of Xc for the Direct-to-Indirect Band-Gap Transition in AlxGa1-xAs by Measuring Hot-Carrier Dynamics in the X Valley",

abstract = "The time evolution of the population of hot electrons in the satellite X valley in AlxGa1-xAs was measured by femtosecond pump-probe infrared (IR)-absorption spectroscopy. The dynamics of the X-valley electrons for samples with x0.408 was found to be different from that for samples with x0.439 which reflects their different types of band gaps. The critical value of xc that corresponds to the direct-to-indirect band-gap transition for AlxGa1-xAs was determined to be 0.4120.009 from the composition dependence of the induced IR absorption.",

author = "Wang, {W. B.} and Alfano, {R. R.} and D. Szmyd and Nozik, {A. J.}",

year = "1992",

doi = "10.1103/PhysRevB.46.15828",

language = "American English",

volume = "46",

pages = "15828--15832",

journal = "Physical Review B",

issn = "0163-1829",

publisher = "American Institute of Physics",

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T1 - Determination of the Critical Value of Xc for the Direct-to-Indirect Band-Gap Transition in AlxGa1-xAs by Measuring Hot-Carrier Dynamics in the X Valley

AU - Wang, W. B.

AU - Alfano, R. R.

AU - Szmyd, D.

AU - Nozik, A. J.

PY - 1992

Y1 - 1992

N2 - The time evolution of the population of hot electrons in the satellite X valley in AlxGa1-xAs was measured by femtosecond pump-probe infrared (IR)-absorption spectroscopy. The dynamics of the X-valley electrons for samples with x0.408 was found to be different from that for samples with x0.439 which reflects their different types of band gaps. The critical value of xc that corresponds to the direct-to-indirect band-gap transition for AlxGa1-xAs was determined to be 0.4120.009 from the composition dependence of the induced IR absorption.

AB - The time evolution of the population of hot electrons in the satellite X valley in AlxGa1-xAs was measured by femtosecond pump-probe infrared (IR)-absorption spectroscopy. The dynamics of the X-valley electrons for samples with x0.408 was found to be different from that for samples with x0.439 which reflects their different types of band gaps. The critical value of xc that corresponds to the direct-to-indirect band-gap transition for AlxGa1-xAs was determined to be 0.4120.009 from the composition dependence of the induced IR absorption.

UR - http://www.scopus.com/inward/record.url?scp=0007993714&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.46.15828

DO - 10.1103/PhysRevB.46.15828

M3 - Article

AN - SCOPUS:0007993714

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VL - 46

SP - 15828

EP - 15832

JO - Physical Review B

JF - Physical Review B

IS - 24

ER -

Determination of the Critical Value of Xc for the Direct-to-Indirect Band-Gap Transition in AlxGa1-xAs by Measuring Hot-Carrier Dynamics in the X Valley

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