Determination of the Direct to Indirect Bandgap Transition Composition in AlxIn1-xP

Daniel Beaton; Theresa Christian; Kirstin Alberi; Kunal Mukherjee; Eugene Fitzgerald; Angelo Mascarenhas

doi:10.1063/1.4833540

Determination of the Direct to Indirect Bandgap Transition Composition in AlxIn1-xP

Daniel Beaton, Theresa Christian, Kirstin Alberi, Kunal Mukherjee, Eugene Fitzgerald, Angelo Mascarenhas

Massachusetts Institute of Technology

Research output: Contribution to journal › Article › peer-review

14 Scopus Citations

Abstract

Al_xIn_1-xP semiconductor alloys grown by metalorganic chemical vapor deposition on InGaAs graded buffer layers with varied aluminum compositions that span the transition from a direct to indirect semiconductor alloy are explored. The direct and indirect band gap transitions are observed in a single Al_xIn_1-xP sample with 40.8% allowing for a precise determination of the direct-indirect cross-over composition, x_c. The direct and indirect nature of observed luminescence peaks is verified using time-resolved photoluminescence. At low temperatures, x_c is determined to be 40.5% at a corresponding direct band gap energy of 2.34 eV.

Original language	American English
Article number	203504
Number of pages	4
Journal	Journal of Applied Physics
Volume	114
Issue number	20
DOIs	https://doi.org/10.1063/1.4833540 https://doi.org/10.1063/1.4833540
State	Published - 28 Nov 2013

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NREL/JA-5900-60194

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title = "Determination of the Direct to Indirect Bandgap Transition Composition in AlxIn1-xP",

abstract = "AlxIn1-xP semiconductor alloys grown by metalorganic chemical vapor deposition on InGaAs graded buffer layers with varied aluminum compositions that span the transition from a direct to indirect semiconductor alloy are explored. The direct and indirect band gap transitions are observed in a single AlxIn1-xP sample with 40.8% allowing for a precise determination of the direct-indirect cross-over composition, xc. The direct and indirect nature of observed luminescence peaks is verified using time-resolved photoluminescence. At low temperatures, xc is determined to be 40.5% at a corresponding direct band gap energy of 2.34 eV.",

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AU - Fitzgerald, Eugene

AU - Mascarenhas, Angelo

PY - 2013/11/28

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N2 - AlxIn1-xP semiconductor alloys grown by metalorganic chemical vapor deposition on InGaAs graded buffer layers with varied aluminum compositions that span the transition from a direct to indirect semiconductor alloy are explored. The direct and indirect band gap transitions are observed in a single AlxIn1-xP sample with 40.8% allowing for a precise determination of the direct-indirect cross-over composition, xc. The direct and indirect nature of observed luminescence peaks is verified using time-resolved photoluminescence. At low temperatures, xc is determined to be 40.5% at a corresponding direct band gap energy of 2.34 eV.

AB - AlxIn1-xP semiconductor alloys grown by metalorganic chemical vapor deposition on InGaAs graded buffer layers with varied aluminum compositions that span the transition from a direct to indirect semiconductor alloy are explored. The direct and indirect band gap transitions are observed in a single AlxIn1-xP sample with 40.8% allowing for a precise determination of the direct-indirect cross-over composition, xc. The direct and indirect nature of observed luminescence peaks is verified using time-resolved photoluminescence. At low temperatures, xc is determined to be 40.5% at a corresponding direct band gap energy of 2.34 eV.

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JO - Journal of Applied Physics

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Determination of the Direct to Indirect Bandgap Transition Composition in AlxIn1-xP

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