Determination of the Direct to Indirect Bandgap Transition Composition in AlxIn1-xP

Daniel Beaton, Theresa Christian, Kirstin Alberi, Kunal Mukherjee, Eugene Fitzgerald, Angelo Mascarenhas

Research output: Contribution to journalArticlepeer-review

14 Scopus Citations


AlxIn1-xP semiconductor alloys grown by metalorganic chemical vapor deposition on InGaAs graded buffer layers with varied aluminum compositions that span the transition from a direct to indirect semiconductor alloy are explored. The direct and indirect band gap transitions are observed in a single AlxIn1-xP sample with 40.8% allowing for a precise determination of the direct-indirect cross-over composition, xc. The direct and indirect nature of observed luminescence peaks is verified using time-resolved photoluminescence. At low temperatures, xc is determined to be 40.5% at a corresponding direct band gap energy of 2.34 eV.

Original languageAmerican English
Article number203504
Number of pages4
JournalJournal of Applied Physics
Issue number20
StatePublished - 28 Nov 2013

NREL Publication Number

  • NREL/JA-5900-60194


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