TY - JOUR
T1 - Determination of the Trap State Density Differences in Hydrogenated Amorphous Silicon-Germanium Alloys
AU - Boshta, M.
AU - Bärner, K.
AU - Braunstein, R.
AU - Alavi, B.
AU - Nelson, B.
PY - 2005
Y1 - 2005
N2 - Time-resolved photo- and thermoelectric effects (TTE) were used to determine simultaneously trap levels and trap state density differences in amorphous (a-SiGe:H) samples. In particular, the trap state density differences are obtained from the decay of the ambipolar charge distribution (i.e., stage II of the TTE transients). This type of spectroscopy has been applied for the first time to a-SiGe:H samples, and indeed trap states that seem to relate to concentration fluctuations, that is, Si(Ge) and Ge(Si) clusters, are observed.
AB - Time-resolved photo- and thermoelectric effects (TTE) were used to determine simultaneously trap levels and trap state density differences in amorphous (a-SiGe:H) samples. In particular, the trap state density differences are obtained from the decay of the ambipolar charge distribution (i.e., stage II of the TTE transients). This type of spectroscopy has been applied for the first time to a-SiGe:H samples, and indeed trap states that seem to relate to concentration fluctuations, that is, Si(Ge) and Ge(Si) clusters, are observed.
UR - http://www.scopus.com/inward/record.url?scp=22144486906&partnerID=8YFLogxK
U2 - 10.1557/JMR.2005.0014
DO - 10.1557/JMR.2005.0014
M3 - Article
AN - SCOPUS:22144486906
SN - 0884-2914
VL - 20
SP - 48
EP - 53
JO - Journal of Materials Research
JF - Journal of Materials Research
IS - 1
ER -