Determination of the Valence-Band Offset of CdS/CIS Solar Cell Devices by Target Factor Analysis

    Research output: Contribution to conferencePaper

    Abstract

    X-ray photoemission spectroscopy (XPS) is used to determine and compare the valence-band offsets for CdS grown by chemical bath deposition on single crystal and thin-film CuInSe/sub 2/ (CIS). The thin-film CIS device was suitable for photovoltaic energy reproduction. By sputtering through the CdS/CIS interface and reducing the depth profile with target factor analysis, the magnitute of ..delta..E/sub v/ was determined to be ..delta..E/sub v/ =1.06 +/- 0.15 eV for both the single-crystal and thin-film interfaces. This determination of ..delta..E/sub v/ is about 0.25 eV larger than many previously reported estimations CdS grown by physical vapor deposition on CIS and helps explain the record performance of CdS/CIS photovoltaic devices.
    Original languageAmerican English
    Pages833-836
    Number of pages4
    DOIs
    StatePublished - 1996
    EventTwenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C.
    Duration: 13 May 199617 May 1996

    Conference

    ConferenceTwenty Fifth IEEE Photovoltaic Specialists Conference
    CityWashington, D.C.
    Period13/05/9617/05/96

    NREL Publication Number

    • NREL/CP-22411

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