Abstract
X-ray photoemission spectroscopy (XPS) is used to determine and compare the valence-band offsets for CdS grown by chemical bath deposition on single crystal and thin-film CuInSe/sub 2/ (CIS). The thin-film CIS device was suitable for photovoltaic energy reproduction. By sputtering through the CdS/CIS interface and reducing the depth profile with target factor analysis, the magnitute of ..delta..E/sub v/ was determined to be ..delta..E/sub v/ =1.06 +/- 0.15 eV for both the single-crystal and thin-film interfaces. This determination of ..delta..E/sub v/ is about 0.25 eV larger than many previously reported estimations CdS grown by physical vapor deposition on CIS and helps explain the record performance of CdS/CIS photovoltaic devices.
Original language | American English |
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Pages | 833-836 |
Number of pages | 4 |
DOIs | |
State | Published - 1996 |
Event | Twenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C. Duration: 13 May 1996 → 17 May 1996 |
Conference
Conference | Twenty Fifth IEEE Photovoltaic Specialists Conference |
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City | Washington, D.C. |
Period | 13/05/96 → 17/05/96 |
NREL Publication Number
- NREL/CP-22411