Abstract
The relationships between Mg composition, band gap, and lattice characteristics are investigated for Cd1−xMgxTe barrier layers using a combination of cathodoluminescence, energy dispersive x-ray spectroscopy, variable angle spectral ellipsometry, and atom probe tomography. The use of a simplified, yet accurate, variable angle spectral ellipsometry analysis is shown to be appropriate for fast determination of composition in thin Cd1−xMgxTe layers. The validity of using high-resolution x-ray diffraction for CdTe/Cd1−xMgxTe double heterostructures is discussed. The stability of CdTe/Cd1−xMgxTe heterostructures are investigated with respect to thermal processing.
Original language | American English |
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Pages (from-to) | 5379-5385 |
Number of pages | 7 |
Journal | Journal of Electronic Materials |
Volume | 46 |
Issue number | 9 |
DOIs | |
State | Published - 1 Sep 2017 |
Bibliographical note
Publisher Copyright:© 2017, The Minerals, Metals & Materials Society.
NREL Publication Number
- NREL/JA-5K00-68890
Keywords
- band gap
- diffusivity
- elastic constants
- II–VI semiconductor materials
- Mg composition
- semiconductor epitaxial layers