Determining and Controlling the Magnesium Composition in CdTe/CdMgTe Heterostructures

Teresa Barnes, E. LeBlanc, M. Edirisooriya, O. Ogedengbe, O. Noriega, P. Jayathilaka, S. Rab, C. Swartz, D. Diercks, G. Burton, B. Gorman, A. Wang, T. Myers

Research output: Contribution to journalArticlepeer-review

12 Scopus Citations


The relationships between Mg composition, band gap, and lattice characteristics are investigated for Cd1−xMgxTe barrier layers using a combination of cathodoluminescence, energy dispersive x-ray spectroscopy, variable angle spectral ellipsometry, and atom probe tomography. The use of a simplified, yet accurate, variable angle spectral ellipsometry analysis is shown to be appropriate for fast determination of composition in thin Cd1−xMgxTe layers. The validity of using high-resolution x-ray diffraction for CdTe/Cd1−xMgxTe double heterostructures is discussed. The stability of CdTe/Cd1−xMgxTe heterostructures are investigated with respect to thermal processing.

Original languageAmerican English
Pages (from-to)5379-5385
Number of pages7
JournalJournal of Electronic Materials
Issue number9
StatePublished - 1 Sep 2017

Bibliographical note

Publisher Copyright:
© 2017, The Minerals, Metals & Materials Society.

NREL Publication Number

  • NREL/JA-5K00-68890


  • band gap
  • diffusivity
  • elastic constants
  • II–VI semiconductor materials
  • Mg composition
  • semiconductor epitaxial layers


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