Determining and Controlling the Magnesium Composition in CdTe/CdMgTe Heterostructures

  • Teresa Barnes
  • , E. LeBlanc
  • , M. Edirisooriya
  • , O. Ogedengbe
  • , O. Noriega
  • , P. Jayathilaka
  • , S. Rab
  • , C. Swartz
  • , D. Diercks
  • , G. Burton
  • , B. Gorman
  • , A. Wang
  • , T. Myers

Research output: Contribution to journalArticlepeer-review

13 Scopus Citations

Abstract

The relationships between Mg composition, band gap, and lattice characteristics are investigated for Cd1−xMgxTe barrier layers using a combination of cathodoluminescence, energy dispersive x-ray spectroscopy, variable angle spectral ellipsometry, and atom probe tomography. The use of a simplified, yet accurate, variable angle spectral ellipsometry analysis is shown to be appropriate for fast determination of composition in thin Cd1−xMgxTe layers. The validity of using high-resolution x-ray diffraction for CdTe/Cd1−xMgxTe double heterostructures is discussed. The stability of CdTe/Cd1−xMgxTe heterostructures are investigated with respect to thermal processing.

Original languageAmerican English
Pages (from-to)5379-5385
Number of pages7
JournalJournal of Electronic Materials
Volume46
Issue number9
DOIs
StatePublished - 1 Sep 2017

Bibliographical note

Publisher Copyright:
© 2017, The Minerals, Metals & Materials Society.

NLR Publication Number

  • NREL/JA-5K00-68890

Keywords

  • band gap
  • diffusivity
  • elastic constants
  • II–VI semiconductor materials
  • Mg composition
  • semiconductor epitaxial layers

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