Determining the Spatial Profiles of Electron and Hole Concentration, Radiative and Non-Radiative Recombination Rate Near a Dislocation Defect by Combining Raman and Photoluminescence Imaging

Changkui Hu; Qiong Chen; Fengxiang Chen; Heng Lv; T. Gfroerer; Yong Zhang

doi:10.1109/PVSC.2018.8548105

Determining the Spatial Profiles of Electron and Hole Concentration, Radiative and Non-Radiative Recombination Rate Near a Dislocation Defect by Combining Raman and Photoluminescence Imaging

Changkui Hu, Qiong Chen, Fengxiang Chen, Heng Lv, T. Gfroerer, Yong Zhang

Materials Science

Research output: Contribution to conference › Paper

1 Scopus Citations

Abstract

For commonly utilized photoluminescence (PL) imaging, the spatial resolution is dictated by the carrier diffusion length rather than by that dictated by the optical system, such as diffraction limit. Here, we show that Raman imaging of the LO phonon-plasmon (LOPP) coupled mode can be used to recover the intrinsic spatial resolution of the optical system, as demonstrated by Raman imaging of defects in GaAs, achieving a 10-fold improvement in resolution. Furthermore, by combining Raman and PL imaging, we can independently determine the spatial profiles of the electron and hole density, radiative and non-radiative recombination rate near a dislocation defect, which has not been possible using other techniques.

Original language	American English
Pages	3261-3264
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2018.8548105
State	Published - 2018
Event	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) - Waikoloa Village, Hawaii Duration: 10 Jun 2018 → 15 Jun 2018

Conference

Conference	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC)
City	Waikoloa Village, Hawaii
Period	10/06/18 → 15/06/18

NREL Publication Number

NREL/CP-5K00-73711

Keywords

charge carrier processes
gallium arsenide
optical diffraction
optical imaging
radiative recombination
spatial resolution

Access to Document

10.1109/PVSC.2018.8548105

Cite this

Hu, C., Chen, Q., Chen, F., Lv, H., Gfroerer, T., & Zhang, Y. (2018). Determining the Spatial Profiles of Electron and Hole Concentration, Radiative and Non-Radiative Recombination Rate Near a Dislocation Defect by Combining Raman and Photoluminescence Imaging. 3261-3264. Paper presented at 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC), Waikoloa Village, Hawaii. https://doi.org/10.1109/PVSC.2018.8548105

@conference{e04dd2eb031d45aebf6f3b6ad71344e9,

title = "Determining the Spatial Profiles of Electron and Hole Concentration, Radiative and Non-Radiative Recombination Rate Near a Dislocation Defect by Combining Raman and Photoluminescence Imaging",

abstract = "For commonly utilized photoluminescence (PL) imaging, the spatial resolution is dictated by the carrier diffusion length rather than by that dictated by the optical system, such as diffraction limit. Here, we show that Raman imaging of the LO phonon-plasmon (LOPP) coupled mode can be used to recover the intrinsic spatial resolution of the optical system, as demonstrated by Raman imaging of defects in GaAs, achieving a 10-fold improvement in resolution. Furthermore, by combining Raman and PL imaging, we can independently determine the spatial profiles of the electron and hole density, radiative and non-radiative recombination rate near a dislocation defect, which has not been possible using other techniques.",

keywords = "charge carrier processes, gallium arsenide, optical diffraction, optical imaging, radiative recombination, spatial resolution",

author = "Changkui Hu and Qiong Chen and Fengxiang Chen and Heng Lv and T. Gfroerer and Yong Zhang",

year = "2018",

doi = "10.1109/PVSC.2018.8548105",

language = "American English",

pages = "3261--3264",

note = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) ; Conference date: 10-06-2018 Through 15-06-2018",

}

Hu, C, Chen, Q, Chen, F, Lv, H, Gfroerer, T & Zhang, Y 2018, 'Determining the Spatial Profiles of Electron and Hole Concentration, Radiative and Non-Radiative Recombination Rate Near a Dislocation Defect by Combining Raman and Photoluminescence Imaging', Paper presented at 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC), Waikoloa Village, Hawaii, 10/06/18 - 15/06/18 pp. 3261-3264. https://doi.org/10.1109/PVSC.2018.8548105

Determining the Spatial Profiles of Electron and Hole Concentration, Radiative and Non-Radiative Recombination Rate Near a Dislocation Defect by Combining Raman and Photoluminescence Imaging. / Hu, Changkui; Chen, Qiong; Chen, Fengxiang et al.
2018. 3261-3264 Paper presented at 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC), Waikoloa Village, Hawaii.

Research output: Contribution to conference › Paper

TY - CONF

T1 - Determining the Spatial Profiles of Electron and Hole Concentration, Radiative and Non-Radiative Recombination Rate Near a Dislocation Defect by Combining Raman and Photoluminescence Imaging

AU - Hu, Changkui

AU - Chen, Qiong

AU - Chen, Fengxiang

AU - Lv, Heng

AU - Gfroerer, T.

AU - Zhang, Yong

PY - 2018

Y1 - 2018

N2 - For commonly utilized photoluminescence (PL) imaging, the spatial resolution is dictated by the carrier diffusion length rather than by that dictated by the optical system, such as diffraction limit. Here, we show that Raman imaging of the LO phonon-plasmon (LOPP) coupled mode can be used to recover the intrinsic spatial resolution of the optical system, as demonstrated by Raman imaging of defects in GaAs, achieving a 10-fold improvement in resolution. Furthermore, by combining Raman and PL imaging, we can independently determine the spatial profiles of the electron and hole density, radiative and non-radiative recombination rate near a dislocation defect, which has not been possible using other techniques.

AB - For commonly utilized photoluminescence (PL) imaging, the spatial resolution is dictated by the carrier diffusion length rather than by that dictated by the optical system, such as diffraction limit. Here, we show that Raman imaging of the LO phonon-plasmon (LOPP) coupled mode can be used to recover the intrinsic spatial resolution of the optical system, as demonstrated by Raman imaging of defects in GaAs, achieving a 10-fold improvement in resolution. Furthermore, by combining Raman and PL imaging, we can independently determine the spatial profiles of the electron and hole density, radiative and non-radiative recombination rate near a dislocation defect, which has not been possible using other techniques.

KW - charge carrier processes

KW - gallium arsenide

KW - optical diffraction

KW - optical imaging

KW - radiative recombination

KW - spatial resolution

U2 - 10.1109/PVSC.2018.8548105

DO - 10.1109/PVSC.2018.8548105

M3 - Paper

SP - 3261

EP - 3264

T2 - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC)

Y2 - 10 June 2018 through 15 June 2018

ER -

Hu C, Chen Q, Chen F, Lv H, Gfroerer T, Zhang Y. Determining the Spatial Profiles of Electron and Hole Concentration, Radiative and Non-Radiative Recombination Rate Near a Dislocation Defect by Combining Raman and Photoluminescence Imaging. 2018. Paper presented at 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC), Waikoloa Village, Hawaii. doi: 10.1109/PVSC.2018.8548105

Determining the Spatial Profiles of Electron and Hole Concentration, Radiative and Non-Radiative Recombination Rate Near a Dislocation Defect by Combining Raman and Photoluminescence Imaging

Abstract

Conference

NREL Publication Number

Keywords

Access to Document

Fingerprint

Cite this