Abstract
As the bandgap of CuInSe2 is increased by alloying with Ga or S, the loss in efficiency due to the decrease of light generated current with increasing voltage becomes important. The standard technique of quantifying this loss is to analyze spectral response measurements made as a function of applied voltage. Instead, it is shown how to determine the voltage dependence of the light generatedcurrent by an analysis of the current-voltage (I-V) measurements made at two different light intensities. By adding an I-V measurement at a third light intensity one can also determine if the analysis technique is valid.
Original language | American English |
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Pages | 463-466 |
Number of pages | 4 |
DOIs | |
State | Published - 1997 |
Event | Twenty Sixth IEEE Photovoltaic Specialists Conference - Anaheim, California Duration: 29 Sep 1997 → 3 Oct 1997 |
Conference
Conference | Twenty Sixth IEEE Photovoltaic Specialists Conference |
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City | Anaheim, California |
Period | 29/09/97 → 3/10/97 |
Bibliographical note
Work performed by University of Delaware, Newark, DelewareNREL Publication Number
- NREL/CP-520-24970