Development and Implementation of New Volatile Cd and Zn Precursors for the Growth of Transparent Conducting Oxide Thin Films via MOCVD

Development and Implementation of New Volatile Cd and Zn Precursors for the Growth of Transparent Conducting Oxide Thin Films via MOCVD

NREL

Research output: Contribution to conference › Paper

Original language	American English
Pages	317-328
Number of pages	12
State	Published - 2000
Event	Materials Science of Novel Oxide-Based Electronics: Materials Research Society Symposium - San Francisco, California Duration: 24 Apr 2000 → 27 Apr 2000

Conference

Conference	Materials Science of Novel Oxide-Based Electronics: Materials Research Society Symposium
City	San Francisco, California
Period	24/04/00 → 27/04/00

Bibliographical note

Work performed by Northwestern University, Evanston, Illinois

NLR Publication Number

NREL/CP-520-30598

Cite this

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title = "Development and Implementation of New Volatile Cd and Zn Precursors for the Growth of Transparent Conducting Oxide Thin Films via MOCVD",

author = "NREL",

note = "Work performed by Northwestern University, Evanston, Illinois; Materials Science of Novel Oxide-Based Electronics: Materials Research Society Symposium ; Conference date: 24-04-2000 Through 27-04-2000",

year = "2000",

language = "American English",

pages = "317--328",

}

TY - CONF

T1 - Development and Implementation of New Volatile Cd and Zn Precursors for the Growth of Transparent Conducting Oxide Thin Films via MOCVD

AU - NREL, null

N1 - Work performed by Northwestern University, Evanston, Illinois

PY - 2000

Y1 - 2000

M3 - Paper

SP - 317

EP - 328

T2 - Materials Science of Novel Oxide-Based Electronics: Materials Research Society Symposium

Y2 - 24 April 2000 through 27 April 2000

ER -