Development of a 2.0 eV AlGaInP Solar Cell Grown by OMVPE

Emmett E. Perl; John Simon; John F. Geisz; Waldo Olavarria; Michelle Young; Anna Duda; Pat Dippo; Daniel J. Friedman; Myles A. Steiner

doi:10.1109/PVSC.2015.7356336

Development of a 2.0 eV AlGaInP Solar Cell Grown by OMVPE

Emmett E. Perl, John Simon, John F. Geisz, Waldo Olavarria, Michelle Young, Anna Duda, Pat Dippo, Daniel J. Friedman, Myles A. Steiner

Chemistry and Nanoscience

Research output: Contribution to conference › Paper › peer-review

16 Scopus Citations

Abstract

AlGaInP solar cells with a bandgap (Eg) of ∼2.0 eV are developed for use in next-generation multijunction photovoltaic devices. This material system is of great interest for both space and concentrator photovoltaics due to its high bandgap, which enables the development of high-efficiency five-junction and six-junction devices and is also useful for solar cells operated at elevated temperatures. In this work, we explore the conditions for the Organometallic Vapor Phase Epitaxy (OMVPE) growth of AlGaInP and study their effects on cell performance. A ∼2.0 eV AlGaInP solar cell is demonstrated with an open circuit voltage (VOC) of 1.59V, a bandgap-voltage offset (WOC) of 420mV, a fill factor (FF) of 88.0%, and an efficiency of 14.8%. These AlGaInP cells have attained a similar FF, WOC and internal quantum efficiency (IQE) to the best upright GaInP cells grown in our lab to date.

Original language	American English
Number of pages	6
DOIs	https://doi.org/10.1109/PVSC.2015.7356336 https://doi.org/10.1109/PVSC.2015.7356336
State	Published - 14 Dec 2015
Event	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015

Conference

Conference	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/Territory	United States
City	New Orleans
Period	14/06/15 → 19/06/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

NREL Publication Number

NREL/CP-5J00-64446

Keywords

III-V semiconductor materials
photovoltaic cells
semiconductor epitaxial layers
solar energy

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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Perl, E. E., Simon, J., Geisz, J. F., Olavarria, W., Young, M., Duda, A., Dippo, P., Friedman, D. J., & Steiner, M. A. (2015). Development of a 2.0 eV AlGaInP Solar Cell Grown by OMVPE. Paper presented at 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States. https://doi.org/10.1109/PVSC.2015.7356336, https://doi.org/10.1109/PVSC.2015.7356336

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Perl, EE, Simon, J , Geisz, JF, Olavarria, W, Young, M, Duda, A, Dippo, P, Friedman, DJ & Steiner, MA 2015, 'Development of a 2.0 eV AlGaInP Solar Cell Grown by OMVPE', Paper presented at 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 14/06/15 - 19/06/15. https://doi.org/10.1109/PVSC.2015.7356336, https://doi.org/10.1109/PVSC.2015.7356336

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AU - Perl, Emmett E.

AU - Simon, John

AU - Geisz, John F.

AU - Olavarria, Waldo

AU - Young, Michelle

AU - Duda, Anna

AU - Dippo, Pat

AU - Friedman, Daniel J.

AU - Steiner, Myles A.

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N2 - AlGaInP solar cells with a bandgap (Eg) of ∼2.0 eV are developed for use in next-generation multijunction photovoltaic devices. This material system is of great interest for both space and concentrator photovoltaics due to its high bandgap, which enables the development of high-efficiency five-junction and six-junction devices and is also useful for solar cells operated at elevated temperatures. In this work, we explore the conditions for the Organometallic Vapor Phase Epitaxy (OMVPE) growth of AlGaInP and study their effects on cell performance. A ∼2.0 eV AlGaInP solar cell is demonstrated with an open circuit voltage (VOC) of 1.59V, a bandgap-voltage offset (WOC) of 420mV, a fill factor (FF) of 88.0%, and an efficiency of 14.8%. These AlGaInP cells have attained a similar FF, WOC and internal quantum efficiency (IQE) to the best upright GaInP cells grown in our lab to date.

AB - AlGaInP solar cells with a bandgap (Eg) of ∼2.0 eV are developed for use in next-generation multijunction photovoltaic devices. This material system is of great interest for both space and concentrator photovoltaics due to its high bandgap, which enables the development of high-efficiency five-junction and six-junction devices and is also useful for solar cells operated at elevated temperatures. In this work, we explore the conditions for the Organometallic Vapor Phase Epitaxy (OMVPE) growth of AlGaInP and study their effects on cell performance. A ∼2.0 eV AlGaInP solar cell is demonstrated with an open circuit voltage (VOC) of 1.59V, a bandgap-voltage offset (WOC) of 420mV, a fill factor (FF) of 88.0%, and an efficiency of 14.8%. These AlGaInP cells have attained a similar FF, WOC and internal quantum efficiency (IQE) to the best upright GaInP cells grown in our lab to date.

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Development of a 2.0 eV AlGaInP Solar Cell Grown by OMVPE

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

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