Development of a 2.0 eV AlGaInP Solar Cell Grown by OMVPE

Emmett E. Perl, John Simon, John F. Geisz, Waldo Olavarria, Michelle Young, Anna Duda, Pat Dippo, Daniel J. Friedman, Myles A. Steiner

Research output: Contribution to conferencePaperpeer-review

15 Scopus Citations


AlGaInP solar cells with a bandgap (Eg) of ∼2.0 eV are developed for use in next-generation multijunction photovoltaic devices. This material system is of great interest for both space and concentrator photovoltaics due to its high bandgap, which enables the development of high-efficiency five-junction and six-junction devices and is also useful for solar cells operated at elevated temperatures. In this work, we explore the conditions for the Organometallic Vapor Phase Epitaxy (OMVPE) growth of AlGaInP and study their effects on cell performance. A ∼2.0 eV AlGaInP solar cell is demonstrated with an open circuit voltage (VOC) of 1.59V, a bandgap-voltage offset (WOC) of 420mV, a fill factor (FF) of 88.0%, and an efficiency of 14.8%. These AlGaInP cells have attained a similar FF, WOC and internal quantum efficiency (IQE) to the best upright GaInP cells grown in our lab to date.

Original languageAmerican English
Number of pages6
StatePublished - 14 Dec 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: 14 Jun 201519 Jun 2015


Conference42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/TerritoryUnited States
CityNew Orleans

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

NREL Publication Number

  • NREL/CP-5J00-64446


  • III-V semiconductor materials
  • photovoltaic cells
  • semiconductor epitaxial layers
  • solar energy


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