Development of High-Performance GaAs Solar Cells on Large-Grain Polycrystalline Ge Substrates

R. Venkatasubramanian, B. O'Quinn, J. S. Hills, M. L. Timmons, D. P. Malta, B. Keyes, R. Ahrenkiel

Research output: Contribution to conferencePaperpeer-review

2 Scopus Citations


The characterization of MOCVD-grown GaAs-AlGaAs materials and GaAs pPLUn junctions on poly-Ge substrates is presented. Minority carrier lifetime in GaAs-AlGaAs double-hetero (DH) structures grown on these substrates and the variation of lifetimes across different grain-structures are discussed. Minority-carrier diffusion lengths in polycrystalline GaAs p+-n junctions were evaluated by cross-sectional electron-beam induced current (EBIC) scans. The junctions were also studied by plan-view EBIC imaging. Optimization studies of GaAs solar cell on poly-Ge are discussed briefly. The effect of various polycrystalline substrate-induced defects on performance of GaAs solar cells are presented.

Original languageAmerican English
Number of pages6
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1995 MRS Fall Symposium - Boston, MA, USA
Duration: 27 Nov 19951 Dec 1995


ConferenceProceedings of the 1995 MRS Fall Symposium
CityBoston, MA, USA

NREL Publication Number

  • NREL/CP-22311


Dive into the research topics of 'Development of High-Performance GaAs Solar Cells on Large-Grain Polycrystalline Ge Substrates'. Together they form a unique fingerprint.

Cite this