Development of High-Performance GaAs Solar Cells on Large-Grain Polycrystalline Ge Substrates

R. Venkatasubramanian; B. O'Quinn; J. S. Hills; M. L. Timmons; D. P. Malta; B. Keyes; R. Ahrenkiel

Development of High-Performance GaAs Solar Cells on Large-Grain Polycrystalline Ge Substrates

R. Venkatasubramanian, B. O'Quinn, J. S. Hills, M. L. Timmons, D. P. Malta, B. Keyes, R. Ahrenkiel

RTI International

Research output: Contribution to conference › Paper › peer-review

2 Scopus Citations

Abstract

The characterization of MOCVD-grown GaAs-AlGaAs materials and GaAs p^PLUn junctions on poly-Ge substrates is presented. Minority carrier lifetime in GaAs-AlGaAs double-hetero (DH) structures grown on these substrates and the variation of lifetimes across different grain-structures are discussed. Minority-carrier diffusion lengths in polycrystalline GaAs p⁺-n junctions were evaluated by cross-sectional electron-beam induced current (EBIC) scans. The junctions were also studied by plan-view EBIC imaging. Optimization studies of GaAs solar cell on poly-Ge are discussed briefly. The effect of various polycrystalline substrate-induced defects on performance of GaAs solar cells are presented.

Original language	American English
Pages	483-488
Number of pages	6
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1995 MRS Fall Symposium - Boston, MA, USA Duration: 27 Nov 1995 → 1 Dec 1995

Conference

Conference	Proceedings of the 1995 MRS Fall Symposium
City	Boston, MA, USA
Period	27/11/95 → 1/12/95

NREL Publication Number

NREL/CP-22311

Cite this

@conference{863d33d21f3e44e59c5e4be4084ec915,

title = "Development of High-Performance GaAs Solar Cells on Large-Grain Polycrystalline Ge Substrates",

abstract = "The characterization of MOCVD-grown GaAs-AlGaAs materials and GaAs pPLUn junctions on poly-Ge substrates is presented. Minority carrier lifetime in GaAs-AlGaAs double-hetero (DH) structures grown on these substrates and the variation of lifetimes across different grain-structures are discussed. Minority-carrier diffusion lengths in polycrystalline GaAs p+-n junctions were evaluated by cross-sectional electron-beam induced current (EBIC) scans. The junctions were also studied by plan-view EBIC imaging. Optimization studies of GaAs solar cell on poly-Ge are discussed briefly. The effect of various polycrystalline substrate-induced defects on performance of GaAs solar cells are presented.",

author = "R. Venkatasubramanian and B. O'Quinn and Hills, {J. S.} and Timmons, {M. L.} and Malta, {D. P.} and B. Keyes and R. Ahrenkiel",

year = "1996",

language = "American English",

pages = "483--488",

note = "Proceedings of the 1995 MRS Fall Symposium ; Conference date: 27-11-1995 Through 01-12-1995",

}

TY - CONF

T1 - Development of High-Performance GaAs Solar Cells on Large-Grain Polycrystalline Ge Substrates

AU - Venkatasubramanian, R.

AU - O'Quinn, B.

AU - Hills, J. S.

AU - Timmons, M. L.

AU - Malta, D. P.

AU - Keyes, B.

AU - Ahrenkiel, R.

PY - 1996

Y1 - 1996

N2 - The characterization of MOCVD-grown GaAs-AlGaAs materials and GaAs pPLUn junctions on poly-Ge substrates is presented. Minority carrier lifetime in GaAs-AlGaAs double-hetero (DH) structures grown on these substrates and the variation of lifetimes across different grain-structures are discussed. Minority-carrier diffusion lengths in polycrystalline GaAs p+-n junctions were evaluated by cross-sectional electron-beam induced current (EBIC) scans. The junctions were also studied by plan-view EBIC imaging. Optimization studies of GaAs solar cell on poly-Ge are discussed briefly. The effect of various polycrystalline substrate-induced defects on performance of GaAs solar cells are presented.

AB - The characterization of MOCVD-grown GaAs-AlGaAs materials and GaAs pPLUn junctions on poly-Ge substrates is presented. Minority carrier lifetime in GaAs-AlGaAs double-hetero (DH) structures grown on these substrates and the variation of lifetimes across different grain-structures are discussed. Minority-carrier diffusion lengths in polycrystalline GaAs p+-n junctions were evaluated by cross-sectional electron-beam induced current (EBIC) scans. The junctions were also studied by plan-view EBIC imaging. Optimization studies of GaAs solar cell on poly-Ge are discussed briefly. The effect of various polycrystalline substrate-induced defects on performance of GaAs solar cells are presented.

UR - http://www.scopus.com/inward/record.url?scp=0030413828&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030413828

SP - 483

EP - 488

T2 - Proceedings of the 1995 MRS Fall Symposium

Y2 - 27 November 1995 through 1 December 1995

ER -

Development of High-Performance GaAs Solar Cells on Large-Grain Polycrystalline Ge Substrates

Abstract

Conference

NREL Publication Number

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