Development of HVPE-Grown III-V Solar Cells Passivated with AlInP

Research output: NRELPresentation


We present the first AlInP-passivated solar cells grown by dynamic hydride vapor phase epitaxy (D-HVPE). Single junction (1J) GaAs and GaInP/GaAs (2J) tandems with AlInP passivation achieve AM1.5G efficiencies of 26.0% and 28.5%, respectively, which are the highest reported efficiencies for HVPE-grown devices of each type. 1J devices passivated with either AlInP or GaInP exhibit similar VOC and long wavelength current collection, indicating that both windows provide similar passivation. Adding AlInP passivation to the 2J solar cell improves the VOC by -50 mV relative to the device passivated by a GaInP emitter. These achievements remove one of the last barriers limiting parity of HVPE device efficiencies with state-of-the-art.
Original languageAmerican English
Number of pages42
StatePublished - 2022

Publication series

NamePresented at the 49th IEEE Photovoltaic Specialists Conference (PVSC 49), 5-10 June 2022, Philadelphia, Pennsylvania

NREL Publication Number

  • NREL/PR-5900-82749


  • AlInP
  • dynamic hydride vapor phase epitaxy
  • GaAs
  • GaInP
  • HVPE
  • III-V
  • photovoltaic
  • PV
  • solar cell


Dive into the research topics of 'Development of HVPE-Grown III-V Solar Cells Passivated with AlInP'. Together they form a unique fingerprint.

Cite this