@misc{c07edd73afc84af1a72722e44e02dd84,
title = "Development of HVPE-Grown III-V Solar Cells Passivated with AlInP",
abstract = "We present the first AlInP-passivated solar cells grown by dynamic hydride vapor phase epitaxy (D-HVPE). Single junction (1J) GaAs and GaInP/GaAs (2J) tandems with AlInP passivation achieve AM1.5G efficiencies of 26.0% and 28.5%, respectively, which are the highest reported efficiencies for HVPE-grown devices of each type. 1J devices passivated with either AlInP or GaInP exhibit similar VOC and long wavelength current collection, indicating that both windows provide similar passivation. Adding AlInP passivation to the 2J solar cell improves the VOC by -50 mV relative to the device passivated by a GaInP emitter. These achievements remove one of the last barriers limiting parity of HVPE device efficiencies with state-of-the-art.",
keywords = "AlInP, dynamic hydride vapor phase epitaxy, GaAs, GaInP, HVPE, III-V, photovoltaic, PV, solar cell",
author = "Jacob Boyer and Kevin Schulte and Aaron Ptak and John Simon",
year = "2022",
language = "American English",
series = "Presented at the 49th IEEE Photovoltaic Specialists Conference (PVSC 49), 5-10 June 2022, Philadelphia, Pennsylvania",
type = "Other",
}
