Abstract
Radio-frequency (rf) magnetron sputtering was used to investigate the effects of oxygen partial pressure and substrate temperature on the electrical properties of IMO films. In addition, comparisons of IMO films with In2O3 films prepared similarly were used to illustrate the effects of the Mo dopant.
Original language | American English |
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Pages (from-to) | 1092-1097 |
Number of pages | 6 |
Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
Volume | 21 |
Issue number | 4 |
DOIs | |
State | Published - 2003 |
NREL Publication Number
- NREL/JA-520-33053