Development of Radio-Frequency Magnetron Sputtered Indium Molybdenum Oxide

Y. Yoshida, T. A. Gessert, C. L. Perkins, T. J. Coutts

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74 Scopus Citations

Abstract

Radio-frequency (rf) magnetron sputtering was used to investigate the effects of oxygen partial pressure and substrate temperature on the electrical properties of IMO films. In addition, comparisons of IMO films with In2O3 films prepared similarly were used to illustrate the effects of the Mo dopant.

Original languageAmerican English
Pages (from-to)1092-1097
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume21
Issue number4
DOIs
StatePublished - 2003

NREL Publication Number

  • NREL/JA-520-33053

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