Development of Scanning Capacitance Spectroscopy of CIGS Solar Cells

Chuanxiao Xiao; Helio Moutinho; Chun Sheng Jiang; Bobby To; Mowafak Al-Jassim; Dean Levi; Yanfa Yan

doi:10.1109/PVSC.2015.7355593

Development of Scanning Capacitance Spectroscopy of CIGS Solar Cells

Chuanxiao Xiao, Helio Moutinho, Chun Sheng Jiang, Bobby To, Mowafak Al-Jassim, Dean Levi, Yanfa Yan

University of Toledo

Research output: Contribution to conference › Paper › peer-review

2 Scopus Citations

Abstract

We successfully applied scanning capacitance spectroscopy (SCS) on CIGS solar cells. In SCS, a high-quality insulating layer is needed to block the AC and DC conductance between the probe and sample. A sample preparation procedure was developed on CIGS/CdS cross-sectional samples for optimal and reproducible results. Spectra taken with 10-nm intervals showed clear p- and n-type behaviors of CIGS and CdS, respectively. Rapid changes in spectra in the depletion region allowed us to locate the electrical junction with fine resolution of 10-30 nm.

Original language	American English
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2015.7355593 https://doi.org/10.1109/PVSC.2015.7355593
State	Published - 14 Dec 2015
Event	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015

Conference

Conference	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/Territory	United States
City	New Orleans
Period	14/06/15 → 19/06/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

NREL Publication Number

NREL/CP-5K00-63589

Keywords

CIGS
cross-section
depletion region
junction
resolution
sample preparation
Scanning capacitance

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title = "Development of Scanning Capacitance Spectroscopy of CIGS Solar Cells",

abstract = "We successfully applied scanning capacitance spectroscopy (SCS) on CIGS solar cells. In SCS, a high-quality insulating layer is needed to block the AC and DC conductance between the probe and sample. A sample preparation procedure was developed on CIGS/CdS cross-sectional samples for optimal and reproducible results. Spectra taken with 10-nm intervals showed clear p- and n-type behaviors of CIGS and CdS, respectively. Rapid changes in spectra in the depletion region allowed us to locate the electrical junction with fine resolution of 10-30 nm.",

keywords = "CIGS, cross-section, depletion region, junction, resolution, sample preparation, Scanning capacitance",

author = "Chuanxiao Xiao and Helio Moutinho and Jiang, {Chun Sheng} and Bobby To and Mowafak Al-Jassim and Dean Levi and Yanfa Yan",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 ; Conference date: 14-06-2015 Through 19-06-2015",

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doi = "10.1109/PVSC.2015.7355593",

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T1 - Development of Scanning Capacitance Spectroscopy of CIGS Solar Cells

AU - Xiao, Chuanxiao

AU - Moutinho, Helio

AU - Jiang, Chun Sheng

AU - To, Bobby

AU - Al-Jassim, Mowafak

AU - Levi, Dean

AU - Yan, Yanfa

PY - 2015/12/14

Y1 - 2015/12/14

N2 - We successfully applied scanning capacitance spectroscopy (SCS) on CIGS solar cells. In SCS, a high-quality insulating layer is needed to block the AC and DC conductance between the probe and sample. A sample preparation procedure was developed on CIGS/CdS cross-sectional samples for optimal and reproducible results. Spectra taken with 10-nm intervals showed clear p- and n-type behaviors of CIGS and CdS, respectively. Rapid changes in spectra in the depletion region allowed us to locate the electrical junction with fine resolution of 10-30 nm.

AB - We successfully applied scanning capacitance spectroscopy (SCS) on CIGS solar cells. In SCS, a high-quality insulating layer is needed to block the AC and DC conductance between the probe and sample. A sample preparation procedure was developed on CIGS/CdS cross-sectional samples for optimal and reproducible results. Spectra taken with 10-nm intervals showed clear p- and n-type behaviors of CIGS and CdS, respectively. Rapid changes in spectra in the depletion region allowed us to locate the electrical junction with fine resolution of 10-30 nm.

KW - CIGS

KW - cross-section

KW - depletion region

KW - junction

KW - resolution

KW - sample preparation

KW - Scanning capacitance

UR - http://www.scopus.com/inward/record.url?scp=84961590084&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2015.7355593

DO - 10.1109/PVSC.2015.7355593

M3 - Paper

AN - SCOPUS:84961590084

T2 - 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015

Y2 - 14 June 2015 through 19 June 2015

ER -

Development of Scanning Capacitance Spectroscopy of CIGS Solar Cells

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

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