Device and Material Characterization of Cu(InGa)Se2 Solar Cells with Increasing Band Gap

Research output: Contribution to journal › Article

Work performed by the University of Delaware, Newark, Delaware

NREL Publication Number

@article{8c4dd6caf9e74c739b2264965a895ed3,

title = "Device and Material Characterization of Cu(InGa)Se2 Solar Cells with Increasing Band Gap",

author = "NREL",

note = "Work performed by the University of Delaware, Newark, Delaware",

year = "1996",

doi = "10.1063/1.361431",

language = "American English",

volume = "79",

pages = "7324--7328",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Device and Material Characterization of Cu(InGa)Se2 Solar Cells with Increasing Band Gap

AU - NREL, null

N1 - Work performed by the University of Delaware, Newark, Delaware

PY - 1996

Y1 - 1996

U2 - 10.1063/1.361431

DO - 10.1063/1.361431

M3 - Article

SN - 0021-8979

VL - 79

SP - 7324

EP - 7328

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -