Device Fabrication using Crystalline CdTe and CdTe Ternary Alloys Grown by MBE

Katherine Zaunbrecher; James Burst; Shahram Seyedmohammadi; Roger Malik; Jian V. Li; Timothy A. Gessert; Teresa Barnes

doi:10.1109/PVSC.2015.7356084

Device Fabrication using Crystalline CdTe and CdTe Ternary Alloys Grown by MBE

Katherine Zaunbrecher, James Burst, Shahram Seyedmohammadi, Roger Malik, Jian V. Li, Timothy A. Gessert, Teresa Barnes

Materials Science

Research output: Contribution to conference › Paper › peer-review

Abstract

We fabricated epitaxial CdTe:In/CdTe:As homojunction and CdZnTe/CdTe and CdMgTe/CdTe heterojunction devices grown on bulk CdTe substrates in order to study the fundamental device physics of CdTe solar cells. Selection of emitter-layer alloys was based on passivation studies using double heterostructures as well as band alignment. Initial results show significant device integration challenges, including low dopant activation, high resistivity substrates and the development of low-resistance contacts. To date, the highest open-circuit voltage is 715 mV in a CdZnTe/CdTe heterojunction following anneal, while the highest fill factor of 52% was attained in an annealed CdTe homojunction. In general, all currentvoltage measurements show high series resistance, capacitancevoltages measurements show variable doping, and quantum efficiency measurements show low collection. Ongoing work includes overcoming the high resistance in these devices and addressing other possible device limitations such as non-optimum junction depth, interface recombination, and reduced bulk lifetime due to structural defects.

Original language	American English
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2015.7356084 https://doi.org/10.1109/PVSC.2015.7356084
State	Published - 14 Dec 2015
Event	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015

Conference

Conference	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/Territory	United States
City	New Orleans
Period	14/06/15 → 19/06/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

NREL Publication Number

NREL/CP-5K00-66381

Keywords

epitaxial layers
photovoltaic cells
thin films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

Cite this

Zaunbrecher, K., Burst, J., Seyedmohammadi, S., Malik, R., Li, J. V., Gessert, T. A., & Barnes, T. (2015). Device Fabrication using Crystalline CdTe and CdTe Ternary Alloys Grown by MBE. Paper presented at 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States. https://doi.org/10.1109/PVSC.2015.7356084, https://doi.org/10.1109/PVSC.2015.7356084

@conference{a45fe5625ac14a1dadc44a06e166d58b,

title = "Device Fabrication using Crystalline CdTe and CdTe Ternary Alloys Grown by MBE",

abstract = "We fabricated epitaxial CdTe:In/CdTe:As homojunction and CdZnTe/CdTe and CdMgTe/CdTe heterojunction devices grown on bulk CdTe substrates in order to study the fundamental device physics of CdTe solar cells. Selection of emitter-layer alloys was based on passivation studies using double heterostructures as well as band alignment. Initial results show significant device integration challenges, including low dopant activation, high resistivity substrates and the development of low-resistance contacts. To date, the highest open-circuit voltage is 715 mV in a CdZnTe/CdTe heterojunction following anneal, while the highest fill factor of 52% was attained in an annealed CdTe homojunction. In general, all currentvoltage measurements show high series resistance, capacitancevoltages measurements show variable doping, and quantum efficiency measurements show low collection. Ongoing work includes overcoming the high resistance in these devices and addressing other possible device limitations such as non-optimum junction depth, interface recombination, and reduced bulk lifetime due to structural defects.",

keywords = "epitaxial layers, photovoltaic cells, thin films",

author = "Katherine Zaunbrecher and James Burst and Shahram Seyedmohammadi and Roger Malik and Li, {Jian V.} and Gessert, {Timothy A.} and Teresa Barnes",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 ; Conference date: 14-06-2015 Through 19-06-2015",

year = "2015",

month = dec,

day = "14",

doi = "10.1109/PVSC.2015.7356084",

language = "American English",

}

Zaunbrecher, K, Burst, J, Seyedmohammadi, S, Malik, R, Li, JV, Gessert, TA & Barnes, T 2015, 'Device Fabrication using Crystalline CdTe and CdTe Ternary Alloys Grown by MBE', Paper presented at 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 14/06/15 - 19/06/15. https://doi.org/10.1109/PVSC.2015.7356084, https://doi.org/10.1109/PVSC.2015.7356084

TY - CONF

T1 - Device Fabrication using Crystalline CdTe and CdTe Ternary Alloys Grown by MBE

AU - Zaunbrecher, Katherine

AU - Burst, James

AU - Seyedmohammadi, Shahram

AU - Malik, Roger

AU - Li, Jian V.

AU - Gessert, Timothy A.

AU - Barnes, Teresa

PY - 2015/12/14

Y1 - 2015/12/14

N2 - We fabricated epitaxial CdTe:In/CdTe:As homojunction and CdZnTe/CdTe and CdMgTe/CdTe heterojunction devices grown on bulk CdTe substrates in order to study the fundamental device physics of CdTe solar cells. Selection of emitter-layer alloys was based on passivation studies using double heterostructures as well as band alignment. Initial results show significant device integration challenges, including low dopant activation, high resistivity substrates and the development of low-resistance contacts. To date, the highest open-circuit voltage is 715 mV in a CdZnTe/CdTe heterojunction following anneal, while the highest fill factor of 52% was attained in an annealed CdTe homojunction. In general, all currentvoltage measurements show high series resistance, capacitancevoltages measurements show variable doping, and quantum efficiency measurements show low collection. Ongoing work includes overcoming the high resistance in these devices and addressing other possible device limitations such as non-optimum junction depth, interface recombination, and reduced bulk lifetime due to structural defects.

AB - We fabricated epitaxial CdTe:In/CdTe:As homojunction and CdZnTe/CdTe and CdMgTe/CdTe heterojunction devices grown on bulk CdTe substrates in order to study the fundamental device physics of CdTe solar cells. Selection of emitter-layer alloys was based on passivation studies using double heterostructures as well as band alignment. Initial results show significant device integration challenges, including low dopant activation, high resistivity substrates and the development of low-resistance contacts. To date, the highest open-circuit voltage is 715 mV in a CdZnTe/CdTe heterojunction following anneal, while the highest fill factor of 52% was attained in an annealed CdTe homojunction. In general, all currentvoltage measurements show high series resistance, capacitancevoltages measurements show variable doping, and quantum efficiency measurements show low collection. Ongoing work includes overcoming the high resistance in these devices and addressing other possible device limitations such as non-optimum junction depth, interface recombination, and reduced bulk lifetime due to structural defects.

KW - epitaxial layers

KW - photovoltaic cells

KW - thin films

UR - http://www.scopus.com/inward/record.url?scp=84961572804&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2015.7356084

DO - 10.1109/PVSC.2015.7356084

M3 - Paper

AN - SCOPUS:84961572804

T2 - 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015

Y2 - 14 June 2015 through 19 June 2015

ER -

Device Fabrication using Crystalline CdTe and CdTe Ternary Alloys Grown by MBE

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this