Device Fabrication using Crystalline CdTe and CdTe Ternary Alloys Grown by MBE

Engineering

• Homojunction 100%
• Heterojunctions 100%
• Ternary Alloy 100%
• Series Resistance 50%
• Limitations 50%
• Fill Factor 50%
• Passivation 50%
• Bulk Lifetime 50%
• Interface Recombination 50%
• Heterostructures 50%
• Junction Depth 50%
• Structural Defect 50%
• Alloy Layer 50%
• Dopant Activation 50%
• Quantum Efficiency 50%
• Open Circuit Voltage 50%
• Solar Cell 50%

Material Science

• Heterojunction 100%
• Device Fabrication 100%
• Molecular Beam Epitaxy 100%
• Ternary Alloy 100%
• Solar Cell 33%
• Electronic Circuit 33%
• Electrical Resistivity 33%
• Doping (Additives) 33%
• Contact Resistance 33%
• Device Integration 33%