Dielectric Function Spectra at 40 K and Critical-Point Energies for CuIn0.7Ga0.3Se2

S. G. Choi; R. Chen; C. Persson; T. J. Kim; S. Y. Hwang; Y. D. Kim; L. M. Mansfield

doi:10.1063/1.4773362

Dielectric Function Spectra at 40 K and Critical-Point Energies for CuIn0.7Ga0.3Se2

S. G. Choi, R. Chen, C. Persson, T. J. Kim, S. Y. Hwang, Y. D. Kim, L. M. Mansfield

Materials Science

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Abstract

We report ellipsometrically determined dielectric function ε spectra for CuIn_0.7Ga_0.3Se₂ thin film at 40 and 300 K. The data exhibit numerous spectral features associated with interband critical points (CPs) in the spectral range from 0.74 to 6.43 eV. The second-energy-derivatives of ε further reveal a total of twelve above-bandgap CP features, whose energies are obtained accurately by a standard lineshape analysis. The ε spectra determined by ellipsometry show a good agreement with the results of full-potential linearized augmented plane wave calculations. Probable electronic origins of the CP features observed are discussed.

Original language	American English
Article number	261903
Number of pages	4
Journal	Applied Physics Letters
Volume	101
Issue number	26
DOIs	https://doi.org/10.1063/1.4773362 https://doi.org/10.1063/1.4773362
State	Published - 24 Dec 2012

NREL Publication Number

NREL/JA-5200-55488

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title = "Dielectric Function Spectra at 40 K and Critical-Point Energies for CuIn0.7Ga0.3Se2",

abstract = "We report ellipsometrically determined dielectric function ε spectra for CuIn0.7Ga0.3Se2 thin film at 40 and 300 K. The data exhibit numerous spectral features associated with interband critical points (CPs) in the spectral range from 0.74 to 6.43 eV. The second-energy-derivatives of ε further reveal a total of twelve above-bandgap CP features, whose energies are obtained accurately by a standard lineshape analysis. The ε spectra determined by ellipsometry show a good agreement with the results of full-potential linearized augmented plane wave calculations. Probable electronic origins of the CP features observed are discussed.",

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AU - Choi, S. G.

AU - Chen, R.

AU - Persson, C.

AU - Kim, T. J.

AU - Hwang, S. Y.

AU - Kim, Y. D.

AU - Mansfield, L. M.

PY - 2012/12/24

Y1 - 2012/12/24

N2 - We report ellipsometrically determined dielectric function ε spectra for CuIn0.7Ga0.3Se2 thin film at 40 and 300 K. The data exhibit numerous spectral features associated with interband critical points (CPs) in the spectral range from 0.74 to 6.43 eV. The second-energy-derivatives of ε further reveal a total of twelve above-bandgap CP features, whose energies are obtained accurately by a standard lineshape analysis. The ε spectra determined by ellipsometry show a good agreement with the results of full-potential linearized augmented plane wave calculations. Probable electronic origins of the CP features observed are discussed.

AB - We report ellipsometrically determined dielectric function ε spectra for CuIn0.7Ga0.3Se2 thin film at 40 and 300 K. The data exhibit numerous spectral features associated with interband critical points (CPs) in the spectral range from 0.74 to 6.43 eV. The second-energy-derivatives of ε further reveal a total of twelve above-bandgap CP features, whose energies are obtained accurately by a standard lineshape analysis. The ε spectra determined by ellipsometry show a good agreement with the results of full-potential linearized augmented plane wave calculations. Probable electronic origins of the CP features observed are discussed.

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VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

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ER -

Dielectric Function Spectra at 40 K and Critical-Point Energies for CuIn0.7Ga0.3Se2

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