Differences in Cell Behavior After Light Soaks Through the P-Layer and the N-Layer of a-Si:H PIN Cells

    Research output: Contribution to conferencePaper

    Original languageAmerican English
    Pages519-522
    Number of pages4
    StatePublished - 1985
    EventEighteenth IEEE Photovoltaic Specialists Conference-1985 - Las Vegas, Nevada
    Duration: 21 Oct 198525 Oct 1985

    Conference

    ConferenceEighteenth IEEE Photovoltaic Specialists Conference-1985
    CityLas Vegas, Nevada
    Period21/10/8525/10/85

    Bibliographical note

    Work performed by Colorado School of Mines, Golden, Colorado, and Solar Energy Research Institute, Golden, Colorado

    NREL Publication Number

    • ACNR/CP-212-7817

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