Diffusion, Drift, and Recombination of Holes in a-Si:H

Diffusion, Drift, and Recombination of Holes in a-Si:H

Research output: Contribution to conference › Paper

Original language	American English
Pages	427-436
Number of pages	10
State	Published - 1995
Event	Amorphous Silicon Technology 1995: Materials Research Society Symposium - San Francisco, California Duration: 18 Apr 1995 → 21 Apr 1995

Conference

Conference	Amorphous Silicon Technology 1995: Materials Research Society Symposium
City	San Francisco, California
Period	18/04/95 → 21/04/95

Bibliographical note

Work performed by the Technical University of Munich, Germany and Syracuse University, Syracuse, New York

NREL Publication Number

NREL/CP-20848

Cite this

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title = "Diffusion, Drift, and Recombination of Holes in a-Si:H",

author = "NREL",

note = "Work performed by the Technical University of Munich, Germany and Syracuse University, Syracuse, New York; Amorphous Silicon Technology 1995: Materials Research Society Symposium ; Conference date: 18-04-1995 Through 21-04-1995",

year = "1995",

language = "American English",

pages = "427--436",

}

TY - CONF

T1 - Diffusion, Drift, and Recombination of Holes in a-Si:H

AU - NREL, null

N1 - Work performed by the Technical University of Munich, Germany and Syracuse University, Syracuse, New York

PY - 1995

Y1 - 1995

M3 - Paper

SP - 427

EP - 436

T2 - Amorphous Silicon Technology 1995: Materials Research Society Symposium

Y2 - 18 April 1995 through 21 April 1995

ER -